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參數資料
| 型號： | W24512AT-35 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | SRAM |
| 英文描述： | 64K X 8 HIGH SPEED CMOS STATIC RAM |
| 中文描述： | 64K X 8 STANDARD SRAM, 35 ns, PDSO32 |
| 封裝： | TSOP1-32 |
| 文件頁數： | 3/10頁 |
| 文件大小： | 214K |
| 代理商： | W24512AT-35 |
W24512A
Publication Release Date: April 1997
- 3 -
Revision A3
CAPACITANCE
(V
DD
= 5V, T
A
= 25
°
C, f = 1 MHz)
PARAMETER
SYM.
CONDITIONS
MAX.
UNIT
Input Capacitance
C
IN
V
IN
= 0V
8
pF
Input/Output Capacitance
C
I/O
V
OUT
= 0V
10
pF
Note: These parameters are sampled but not 100% tested.
AC CHARACTERISTICS
AC Test Conditions
PARAMETER
CONDITIONS
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
5 nS
Input and Output Timing Reference Level
1.5V
Output Load
C
L
= 30 pF, I
OH
/I
OL
= -4 mA/8 mA
AC Test Loads and Waveform
90%
90%
5 nS
10%
5 nS
10%
R1 480 ohm
5V
OUTPUT
R2
255 ohm
30 pF
Including
Jig and
Scope
3.0V
0V
5V
OUTPUT
R1 480 ohm
5 pF
Including
Jig and
Scope
R2
255 ohm
(For T
CLZ2,
T
OLZ,
T
CHZ1, CHZ2, OHZ, WHZ,
T
OW
T
)
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