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參數資料
| 型號： | W24L011AQ-10 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 128K X 8 High Speed CMOS Static RAM |
| 中文描述： | 128K的乘八高速CMOS靜態RAM |
| 文件頁數： | 2/10頁 |
| 文件大小： | 206K |
| 代理商： | W24L011AQ-10 |
W24L011A
- 2 -
TRUTH TABLE
CS
OE
WE
X
MODE
I/O1
-
I/O8
V
DD
CURRENT
H
X
Not Selected
High Z
I
SB
, I
SB1
L
H
H
Output Disable
High Z
I
DD
L
L
H
Read
Data Out
I
DD
L
X
L
Write
Data In
I
DD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Supply Voltage to V
SS
Potential
-0.5 to +4.6
V
Input/Output to V
SS
Potential
-0.5 to V
DD
+0.5
V
Allowable Power Dissipation
1.0
W
Storage Temperature
-65 to +150
°
C
Operating Temperature
0 to +70
°
C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(V
DD
= 3.3V
±
5%, V
SS
= 0V, T
A
= 0 to 70
°
C)
PARAMETER
SYM.
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Input Low Voltage
VI
L
-
-0.5
-
0.8
V
Input High Voltage
VI
IH
-
+2.0
-
V
DD
+0.5
V
Input Leakage Current
I
LI
VIN = V
SS
to V
DD
-10
-
+10
μ
A
Output Leakage
Current
I
LO
VI/O = V
SS
to V
DD
, CS = V
IH
(min.) or
OE = V
IH
(min.) or WE = V
IL
(max.)
-10
-
+10
μ
A
Output Low Voltage
V
OL
I
OL
= +8.0 mA
-
-
0.4
V
Output High Voltage
V
OH
I
OH
= -4.0 mA
2.4
-
-
V
Operating Power
Supply Current
I
DD
CS = V
IL
(max.), I/O = 0 mA
10
-
-
130
Cycle = mim., Duty = 100%
12
-
-
120
mA
15
-
-
100
Standby Power
Supply Current
I
SB
CS = V
IH
(min.)
-
-
15
mA
I
SB
1
CS
≥
V
DD
-0.2V
-
-
5
mA
Note: Typical characteristics are at V
DD
= 3.3V, T
A
= 25
°
C.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| W24L011AQ-12 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 High Speed CMOS Static RAM |
| W24L011AQ-15 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 High Speed CMOS Static RAM |
| W24L011AT-10 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 High Speed CMOS Static RAM |
| W24L011AT-12 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 High Speed CMOS Static RAM |
| W24L011AT-15 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 High Speed CMOS Static RAM |
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