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參數資料
| 型號： | 2SK970 |
| 文件頁數： | 3/7頁 |
| 文件大小： | 39K |
| 代理商： | 2SK970 |
50
100
0
Case Temperature T
C
(°C)
150
20
C
Power vs. Temperature Derating
40
60
Maximum Safe Operation Area
D
D
0.3
Drain to Source Voltage V
DS
(V)
1.0
3
1.0
3
10
10
30
100
0.1
100
0.3
30
0.1
10
μ
s
100
μ
s
1m
DCOpeaion(T
C
=25C
Opeaionint on
lmtedb R
DS
Ta = 25°C
Typical Output Characteristics
6
Drain to Source Voltage V
DS
(V)
8
4
2
10
D
D
V
GS
= 2.0 V
Pulse Test
10 V
4 V
5 V
3.5 V
3.0 V
2.5 V
0
2
4
6
8
10
Typical Transfer Characteristics
3
Gate to Source Voltage V
GS
(V)
4
2
1.0
0
5
2
4
6
8
10
D
D
T
C
= 25°C
75°C
V
= 10 V
Pulse Test
–25°C
2SK970
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK973(L) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK973(S) | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-252AA |
| 2SK974(L) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK974(S) | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA |
| 2SK981 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK970(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK971 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK971(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK972 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK972(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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