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參數資料
| 型號： | 2SK973(L) |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直|甲（丁）|對251AA |
| 文件頁數： | 4/7頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 2SK973(L) |
2SK970
D
V
D
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
6
Gate to Source Voltage V
GS
(V)
8
4
2
0
10
0.8
1.2
1.6
2.0
0.4
Pulse Test
I
D
= 2 A
5 A
10 A
5
Drain Current I
D
(A)
10
2
1.0
50
0.05
0.1
0.2
0.5
1.0
0.5
0.02
0.01
20
Static Drain to Source on State
Resistance vs. Drain Current
S
R
D
)
V
GS
= 4 V
10 V
Pulse Test
40
Case Temperature T
C
(°C)
80
0
–40
160
0.1
0.2
0.3
0.4
0.5
0
120
Static Drain to Source on State
Resistance vs. Temperature
S
R
D
)
I
D
= 10 A
5 A
2 A
2 A
5 A
10 A
Pulse Test
V
GS
= 4 V
V
GS
= 10 V
Forward Transfer Admittance
vs. Drain Current
50
20
10
5
2
1.0
0.5
0.1
0.2
0.5
1.0
2
10
Drain Current I
D
(A)
5
F
y
T
C
= 25°C
–25°C
V
DS
= 10 V
Pulse Test
75°C
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK973(S) | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-252AA |
| 2SK974(L) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK974(S) | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA |
| 2SK981 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK981A | TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 3A I(D) | TO-221VAR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK973S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK974 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:高速高壓MOS大功率場效應管 |
| 2SK974(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-251AA |
| 2SK974(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA |
| 2SK974L | 制造商:Renesas Electronics Corporation 功能描述: |
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