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參數(shù)資料
| 型號： | MBT3906DW1T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual General Purpose Transistor |
| 中文描述： | 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 419B-02, SC-70, SC-88, 6 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 111K |
| 代理商： | MBT3906DW1T1G |
Semiconductor Components Industries, LLC, 2005
January, 2005 Rev. 1
1
Publication Order Number:
MBT3906DW1T1/D
MBT3906DW1T1
Dual General Purpose
Transistor
The MBT3906DW1T1 device is a spinoff of our popular
SOT23/SOT323 threeleaded device. It is designed for general
purpose amplifier applications and is housed in the SOT363
sixleaded surface mount package. By putting two discrete devices in
one package, this device is ideal for lowpower surface mount
applications where board space is at a premium.
Features
h
FE
, 100300
Low V
CE(sat)
,
≤
0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7inch/3,000 Unit Tape and Reel
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
40
Vdc
CollectorBase Voltage
V
CBO
40
Vdc
EmitterBase Voltage
V
EBO
5.0
Vdc
Collector Current Continuous
I
C
200
mAdc
Electrostatic Discharge
ESD
HBM>16000,
MM>2000
V
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Package Dissipation (Note 1)
T
A
= 25
°
C
P
D
150
mW
Thermal Resistance,
JunctiontoAmbient
R
JA
833
°
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
55 to +150
°
C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
Device
Package
Shipping
ORDERING INFORMATION
MBT3906DW1T1
SOT363
SOT363/SC88
CASE 419B
STYLE 1
3000 Units/Reel
Q
1
(1)
(2)
(3)
(4)
(5)
(6)
Q
2
MBT3906DW1T1G
SOT363
(PbFree)
3000 Units/Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MARKING DIAGRAM
A2 = Device Code
d
= Date Code
A2
d
1
6
1
http://onsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBT3906DW1T1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual General Purpose Transistor |
| MBT3906DW1T2G | 制造商:ON Semiconductor 功能描述:SS SC88 GP XSTR PNP 40V - Tape and Reel 制造商:ON Semiconductor 功能描述:Dual PNP Bipolar Transistor 制造商:ON Semiconductor 功能描述:REEL - SS SC88 GP XSTR PNP 40V |
| MBT3906DW1T3 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel 制造商:ON Semiconductor 功能描述: |
| MBT3946DW | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual General Purpose Transistor NPN+PNP Silicon |
| MBT3946DW1T1 | 功能描述:兩極晶體管 - BJT 200mA 40V Dual RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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