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參數資料
| 型號： | MBT3906DW1T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual General Purpose Transistor |
| 中文描述： | 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 419B-02, SC-70, SC-88, 6 PIN |
| 文件頁數： | 3/6頁 |
| 文件大?。?/td> | 111K |
| 代理商： | MBT3906DW1T1G |
MBT3906DW1T1
http://onsemi.com
3
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
3 V
275
10 k
1N916
C
s
< 4 pF*
3 V
275
10 k
C
s
< 4 pF*
< 1 ns
+0.5 V
10.6 V
300 ns
DUTY CYCLE = 2%
< 1 ns
+9.1 V
10.9 V
DUTY CYCLE = 2%
t
1
0
10 < t
1
< 500 s
* Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
REVERSE BIAS (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 4. Charge Data
I
C
, COLLECTOR CURRENT (mA)
5000
1.0
V
CC
= 40 V
I
C
/I
B
= 10
Q
3000
2000
1000
700
500
300
200
100
70
50
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
C
1.0
2.0 3.0
5.0 7.0 10
20 30 40
0.2 0.3
0.5 0.7
Q
T
Q
A
C
ibo
C
obo
T
J
= 25
°
C
T
J
= 125
°
C
Figure 5. TurnOn Time
I
C
, COLLECTOR CURRENT (mA)
70
50
100
200
300
500
T
1.0
2.0 3.0
10
20
70
5
100
Figure 6. Fall Time
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0
30
50
200
10
30
20
7
70
50
100
200
300
500
1.0
2.0 3.0
10
20
70
5
100
5.0 7.0
30
50
200
10
30
20
7
t
f
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 10
t
r
@ V
CC
= 3.0 V
t
d
@ V
OB
= 0 V
40 V
15 V
2.0 V
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MBT3906DW1T1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual General Purpose Transistor |
| MBT3906DW1T2G | 制造商:ON Semiconductor 功能描述:SS SC88 GP XSTR PNP 40V - Tape and Reel 制造商:ON Semiconductor 功能描述:Dual PNP Bipolar Transistor 制造商:ON Semiconductor 功能描述:REEL - SS SC88 GP XSTR PNP 40V |
| MBT3906DW1T3 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel 制造商:ON Semiconductor 功能描述: |
| MBT3946DW | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual General Purpose Transistor NPN+PNP Silicon |
| MBT3946DW1T1 | 功能描述:兩極晶體管 - BJT 200mA 40V Dual RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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