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參數資料
| 型號： | MC100EP16VADT |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 通用總線功能 |
| 英文描述： | 3.3V / 5VECL Differential Receiver/Driver with High Gain |
| 中文描述： | LINE TRANSCEIVER, PDSO8 |
| 封裝： | PLASTIC, TSSOP-8 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 75K |
| 代理商： | MC100EP16VADT |
MC10EP16T, MC100EP16T
http://onsemi.com
3
10EP DC CHARACTERISTICS, PECL
V
CC
= 3.3 V, V
EE
= 0 V (Note 3)
–40
°
C
Typ
23
2290
1490
25
°
C
Typ
23
2355
1555
85
°
C
Typ
23
2415
1615
Symbol
I
EE
V
OH
V
OL
V
IH
V
IL
V
IHCMR
Characteristic
Min
16
2165
1365
2090
1365
2.0
Max
31
2415
1615
2415
1690
3.3
Min
16
2230
1430
2155
1430
2.0
Max
31
2480
1680
2480
1755
3.3
Min
16
2290
1490
2215
1490
2.0
Max
31
2540
1740
2540
1815
3.3
Unit
mA
mV
mV
mV
mV
V
Power Supply Current
Output HIGH Voltage (Note 4)
Output LOW Voltage (Note 4)
Input HIGH Voltage (Single–Ended)
Input LOW Voltage (Single–Ended)
Input HIGH Voltage Common Mode
Range (Differential) (Note 5)
Internal Termination Resistor
Input HIGH Current
Input LOW Current
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
3. Input and output parameters vary 1:1 with V
CC
. V
EE
can vary +0.3 V to –2.2 V.
4. All loading with 50 to V
–2.0 volts.
5. V
min varies 1:1 with V
EE
, V
IHCMR
max varies 1:1 with V
CC
. The V
IHCMR
range is referenced to the most positive side of the differential
input signal.
R
T
I
IH
I
IL
43
57
150
43
50
57
150
43
57
150
μ
A
μ
A
–150
–150
–150
10EP DC CHARACTERISTICS, PECL
V
CC
= 5.0 V, V
EE
= 0 V (Note 6)
–40
°
C
Typ
23
3990
3190
25
°
C
Typ
23
4055
3255
85
°
C
Typ
23
4115
3315
Symbol
I
EE
V
OH
V
OL
V
IH
V
IL
V
IHCMR
Characteristic
Min
16
3865
3065
3790
3065
2.0
Max
31
4115
3315
4115
3390
5.0
Min
16
3930
3130
3855
3130
2.0
Max
31
4180
3380
4180
3455
5.0
Min
16
3990
3190
3915
3190
2.0
Max
31
4240
3440
4240
3515
5.0
Unit
mA
mV
mV
mV
mV
V
Power Supply Current
Output HIGH Voltage (Note 7)
Output LOW Voltage (Note 7)
Input HIGH Voltage (Single–Ended)
Input LOW Voltage (Single–Ended)
Input HIGH Voltage Common Mode
Range (Differential) (Note 8)
Internal Termination Resistor
Input HIGH Current
Input LOW Current
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
6. Input and output parameters vary 1:1 with V
CC
. V
EE
can vary +2.0 V to –0.5 V.
7. All loading with 50 to V
–2.0 volts.
8. V
min varies 1:1 with V
EE
, V
IHCMR
max varies 1:1 with V
CC
. The V
IHCMR
range is referenced to the most positive side of the differential
input signal.
R
T
I
IH
I
IL
43
57
150
43
50
57
150
43
57
150
μ
A
μ
A
–150
–150
–150
10EP DC CHARACTERISTICS, NECL
V
CC
= 0 V; V
EE
= –5.5 V to –3.0 V (Note 9)
–40
°
C
Typ
23
–1010
–1810
25
°
C
Typ
23
–945
–1745
85
°
C
Typ
23
–885
–1685
Symbol
I
EE
V
OH
V
OL
V
IH
V
IL
V
IHCMR
Characteristic
Min
16
–1135
–1935
–1210
–1935
Max
31
–885
–1685
–885
–1610
0.0
Min
16
–1070
–1870
–1145
–1870
Max
31
–820
–1620
–820
–1545
0.0
Min
16
–1010
–1810
–1085
–1810
Max
31
–760
–1560
–760
–1485
0.0
Unit
mA
mV
mV
mV
mV
V
Power Supply Current
Output HIGH Voltage (Note 10)
Output LOW Voltage (Note 10)
Input HIGH Voltage (Single–Ended)
Input LOW Voltage (Single–Ended)
Input HIGH Voltage Common Mode
Range (Differential) (Note 11)
Internal Termination Resistor
Input HIGH Current
Input LOW Current
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
9. Input and output parameters vary 1:1 with V
CC
.
10.All loading with 50 to V
–2.0 volts.
11.V
IHCMR
min varies 1:1 with V
EE
, V
IHCMR
max varies 1:1 with V
CC
. The V
IHCMR
range is referenced to the most positive side of the differential
input signal.
V
EE
+2.0
V
EE
+2.0
V
EE
+2.0
R
T
I
IH
I
IL
43
57
150
43
50
57
150
43
57
150
μ
A
μ
A
–150
–150
–150
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MC100EP16VADTG | 功能描述:總線收發器 3.3V/5V ECL Diff RoHS:否 制造商:Fairchild Semiconductor 邏輯類型:CMOS 邏輯系列:74VCX 每芯片的通道數量:16 輸入電平:CMOS 輸出電平:CMOS 輸出類型:3-State 高電平輸出電流:- 24 mA 低電平輸出電流:24 mA 傳播延遲時間:6.2 ns 電源電壓-最大:2.7 V, 3.6 V 電源電壓-最小:1.65 V, 2.3 V 最大工作溫度:+ 85 C 封裝 / 箱體:TSSOP-48 封裝:Reel |
| MC100EP16VADTG | 制造商:ON Semiconductor 功能描述:IC - DRIVER/ RECEIVER |
| MC100EP16VADTR2 | 功能描述:總線收發器 3.3V/5V ECL Diff RoHS:否 制造商:Fairchild Semiconductor 邏輯類型:CMOS 邏輯系列:74VCX 每芯片的通道數量:16 輸入電平:CMOS 輸出電平:CMOS 輸出類型:3-State 高電平輸出電流:- 24 mA 低電平輸出電流:24 mA 傳播延遲時間:6.2 ns 電源電壓-最大:2.7 V, 3.6 V 電源電壓-最小:1.65 V, 2.3 V 最大工作溫度:+ 85 C 封裝 / 箱體:TSSOP-48 封裝:Reel |
| MC100EP16VADTR2G | 功能描述:總線收發器 3.3V/5V ECL Diff RoHS:否 制造商:Fairchild Semiconductor 邏輯類型:CMOS 邏輯系列:74VCX 每芯片的通道數量:16 輸入電平:CMOS 輸出電平:CMOS 輸出類型:3-State 高電平輸出電流:- 24 mA 低電平輸出電流:24 mA 傳播延遲時間:6.2 ns 電源電壓-最大:2.7 V, 3.6 V 電源電壓-最小:1.65 V, 2.3 V 最大工作溫度:+ 85 C 封裝 / 箱體:TSSOP-48 封裝:Reel |
| MC100EP16VAMNR4 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:3.3V / 5V ECL Differential Receiver/Driver with High Gain |
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