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參數(shù)資料
| 型號： | MC100EP16VADT |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 通用總線功能 |
| 英文描述： | 3.3V / 5VECL Differential Receiver/Driver with High Gain |
| 中文描述： | LINE TRANSCEIVER, PDSO8 |
| 封裝： | PLASTIC, TSSOP-8 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 75K |
| 代理商： | MC100EP16VADT |
MC10EP16T, MC100EP16T
http://onsemi.com
4
100EP DC CHARACTERISTICS, PECL
V
CC
= 3.3 V, V
EE
= 0 V (Note 12)
–40
°
C
Typ
25
2280
1480
25
°
C
Typ
27
2280
1480
85
°
C
Typ
29
2280
1480
Symbol
I
EE
V
OH
V
OL
V
IH
V
IL
V
IHCMR
Characteristic
Min
18
2155
1355
2075
1355
2.0
Max
35
2405
1605
2420
1675
3.3
Min
20
2155
1355
2075
1355
2.0
Max
37
2405
1605
2420
1675
3.3
Min
22
2155
1355
2075
1355
2.0
Max
39
2405
1605
2420
1675
3.3
Unit
mA
mV
mV
mV
mV
V
Power Supply Current
Output HIGH Voltage (Note 13)
Output LOW Voltage (Note 13)
Input HIGH Voltage (Single–Ended)
Input LOW Voltage (Single–Ended)
Input HIGH Voltage Common Mode
Range (Differential) (Note 14)
Internal Termination Resistor
Input HIGH Current
Input LOW Current
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
12.Input and output parameters vary 1:1 with V
CC
. V
EE
can vary +0.3 V to –2.2 V.
13.All loading with 50 to V
–2.0 volts.
14.V
min varies 1:1 with V
EE
, V
IHCMR
max varies 1:1 with V
CC
. The V
IHCMR
range is referenced to the most positive side of the differential
input signal.
R
T
I
IH
I
IL
43
57
150
43
50
57
150
43
57
150
μ
A
μ
A
–150
–150
–150
100EP DC CHARACTERISTICS, PECL
V
CC
= 5.0 V, V
EE
= 0 V (Note 15)
–40
°
C
Typ
25
3980
3180
25
°
C
Typ
27
3980
3180
85
°
C
Typ
29
3980
3180
Symbol
I
EE
V
OH
V
OL
V
IH
V
IL
V
IHCMR
Characteristic
Min
18
3855
3055
3775
3055
2.0
Max
35
4105
3305
4120
3375
5.0
Min
20
3855
3055
3775
3055
2.0
Max
37
4105
3305
4120
3375
5.0
Min
22
3855
3055
3775
3055
2.0
Max
39
4105
3305
4120
3375
5.0
Unit
mA
mV
mV
mV
mV
V
Power Supply Current
Output HIGH Voltage (Note 16)
Output LOW Voltage (Note 16)
Input HIGH Voltage (Single–Ended)
Input LOW Voltage (Single–Ended)
Input HIGH Voltage Common Mode
Range (Differential) (Note 17)
Internal Termination Resistor
Input HIGH Current
Input LOW Current
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
15.Input and output parameters vary 1:1 with V
CC
. V
EE
can vary +2.0 V to –0.5 V.
16.All loading with 50 to V
–2.0 volts.
17.V
min varies 1:1 with V
EE
, V
IHCMR
max varies 1:1 with V
CC
. The V
IHCMR
range is referenced to the most positive side of the differential
input signal.
R
T
I
IH
I
IL
43
57
150
43
50
57
150
43
57
150
μ
A
μ
A
–150
–150
–150
100EP DC CHARACTERISTICS, NECL
V
CC
= 0 V; V
EE
= –5.5 V to –3.0 V (Note 18)
–40
°
C
Typ
25
–1020
–1820
25
°
C
Typ
27
–1020
–1820
85
°
C
Typ
29
–1020
–1820
Symbol
I
EE
V
OH
V
OL
V
IH
V
IL
V
IHCMR
Characteristic
Min
18
–1145
–1945
–1225
–1945
Max
35
–895
–1695
–880
–1625
0.0
Min
20
–1145
–1945
–1225
–1945
Max
37
–895
–1695
–880
–1625
0.0
Min
22
–1145
–1945
–1225
–1945
Max
39
–895
–1695
–880
–1625
0.0
Unit
mA
mV
mV
mV
mV
V
Power Supply Current
Output HIGH Voltage (Note 19)
Output LOW Voltage (Note 19)
Input HIGH Voltage (Single–Ended)
Input LOW Voltage (Single–Ended)
Input HIGH Voltage Common Mode
Range (Differential) (Note 20)
Internal Termination Resistor
Input HIGH Current
Input LOW Current
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
18.Input and output parameters vary 1:1 with V
CC
.
19.All loading with 50 to V
–2.0 volts.
20.V
IHCMR
min varies 1:1 with V
EE
, V
IHCMR
max varies 1:1 with V
CC
. The V
IHCMR
range is referenced to the most positive side of the differential
input signal.
V
EE
+2.0
V
EE
+2.0
V
EE
+2.0
R
T
I
IH
I
IL
43
57
150
43
50
57
150
43
57
150
μ
A
μ
A
–150
–150
–150
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC100EP16VADTG | 功能描述:總線收發(fā)器 3.3V/5V ECL Diff RoHS:否 制造商:Fairchild Semiconductor 邏輯類型:CMOS 邏輯系列:74VCX 每芯片的通道數(shù)量:16 輸入電平:CMOS 輸出電平:CMOS 輸出類型:3-State 高電平輸出電流:- 24 mA 低電平輸出電流:24 mA 傳播延遲時間:6.2 ns 電源電壓-最大:2.7 V, 3.6 V 電源電壓-最小:1.65 V, 2.3 V 最大工作溫度:+ 85 C 封裝 / 箱體:TSSOP-48 封裝:Reel |
| MC100EP16VADTG | 制造商:ON Semiconductor 功能描述:IC - DRIVER/ RECEIVER |
| MC100EP16VADTR2 | 功能描述:總線收發(fā)器 3.3V/5V ECL Diff RoHS:否 制造商:Fairchild Semiconductor 邏輯類型:CMOS 邏輯系列:74VCX 每芯片的通道數(shù)量:16 輸入電平:CMOS 輸出電平:CMOS 輸出類型:3-State 高電平輸出電流:- 24 mA 低電平輸出電流:24 mA 傳播延遲時間:6.2 ns 電源電壓-最大:2.7 V, 3.6 V 電源電壓-最小:1.65 V, 2.3 V 最大工作溫度:+ 85 C 封裝 / 箱體:TSSOP-48 封裝:Reel |
| MC100EP16VADTR2G | 功能描述:總線收發(fā)器 3.3V/5V ECL Diff RoHS:否 制造商:Fairchild Semiconductor 邏輯類型:CMOS 邏輯系列:74VCX 每芯片的通道數(shù)量:16 輸入電平:CMOS 輸出電平:CMOS 輸出類型:3-State 高電平輸出電流:- 24 mA 低電平輸出電流:24 mA 傳播延遲時間:6.2 ns 電源電壓-最大:2.7 V, 3.6 V 電源電壓-最小:1.65 V, 2.3 V 最大工作溫度:+ 85 C 封裝 / 箱體:TSSOP-48 封裝:Reel |
| MC100EP16VAMNR4 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:3.3V / 5V ECL Differential Receiver/Driver with High Gain |
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