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參數資料
| 型號： | MCM6249WJ35 |
| 廠商： | MOTOROLA INC |
| 元件分類： | SRAM |
| 英文描述： | CRYSTALS 30/50 0+70 20PF 20.000MHZ ATCUT FUND HC-49/UP |
| 中文描述： | 1M X 4 STANDARD SRAM, 35 ns, PDSO32 |
| 封裝： | 0.400 INCH, SOJ-32 |
| 文件頁數： | 2/7頁 |
| 文件大小： | 116K |
| 代理商： | MCM6249WJ35 |
MCM6249
2
MOTOROLA FAST SRAM
TRUTH TABLE
(X = Don’t Care)
E
G
W
Mode
I/O Pin
Cycle
Current
H
X
X
Not Selected
High–Z
—
ISB1, ISB2
ICCA
ICCA
ICCA
L
H
H
Output Disabled
High–Z
—
L
L
H
Read
Dout
High–Z
Read
L
X
L
Write
Write
ABSOLUTE MAXIMUM RATINGS
(See Note)
Rating
Symbol
Value
Unit
Power Supply Voltage Relative to VSS
Voltage Relative to VSS for Any Pin
Except VCC
VCC
Vin, Vout
– 0.5 to + 7.0
V
– 0.5 to VCC + 0.5
V
Output Current (per I/O)
Iout
±
20
mA
Power Dissipation
PD
Tbias
TA
Tstg
1.0
W
Temperature Under Bias
– 10 to + 85
°
C
Operating Temperature
0 to + 70
°
C
Storage Temperature — Plastic
– 55 to + 150
°
C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V
±
10%, TA = 0 to + 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage (Operating Voltage Range)
VCC
VIH
VIL
4.5
5.0
5.5
V
Input High Voltage
2.2
—
VCC + 0.3
0.8
V
Input Low Voltage
– 0.5
*
—
V
*VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width
≤
2.0 ns).
DC CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Output Leakage Current (E = VIH, Vout = 0 to VCC)
Output Low Voltage (IOL = + 8.0 mA)
Output High Voltage (IOH = – 4.0 mA)
Ilkg(I)
Ilkg(O)
VOL
VOH
—
±
1.0
μ
A
—
±
1.0
μ
A
—
0.4
V
2.4
—
V
POWER SUPPLY CURRENTS
Parameter
Symbol
Min
Typ
Max
Unit
AC Active Supply Current (Iout = 0 mA,
VCC = max)
MCM6249–20: tAVAV = 20 ns
MCM6249–25: tAVAV = 25 ns
MCM6249–35: tAVAV = 35 ns
ICC
—
—
—
175
160
145
190
175
160
mA
AC Standby Current (VCC = max,
E = VIH, No other restrictions on
other inputs)
MCM6249–20: tAVAV = 20 ns
MCM6249–25: tAVAV = 25 ns
MCM6249–35: tAVAV = 35 ns
ISB1
—
—
—
50
40
35
60
50
40
mA
CMOS Standby Current (E
≥
VCC – 0.2 V, Vin
≤
VSS + 0.2 V or
≥
VCC – 0.2 V) (VCC = max, f = 0 MHz)
ISB2
—
10
15
mA
This device contains circuitry to protect the
inputs against damage due to high static
voltages or electric fields; however, it is ad-
vised that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to these high impedance
circuits.
This CMOS memory circuit has been de-
signed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear
feet per minute is maintained.
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