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參數(shù)資料
| 型號： | MGP21N60E |
| 廠商： | MOTOROLA INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 31 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 127K |
| 代理商： | MGP21N60E |
3
Motorola TMOS Power MOSFET Transistor Device Data
Figure 1. Output Characteristics, TJ = 25
°
C
Figure 2. Output Characteristics, TJ = 125
°
C
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
Figure 5. Capacitance Variation
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
6.0
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
60
40
20
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
8.0
0
20
0
13
17
5.0
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
60
40
20
0
TJ, JUNCTION TEMPERATURE (
°
C)
–25
–50
2.3
2.1
1.9
1.7
1.5
0
15
5.0
10
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
4000
3200
800
0
QG, TOTAL GATE CHARGE (nC)
25
0
20
16
12
4.0
0
50
I
I
C
V
0
2.0
4.0
2.0
4.0
6.0
40
60
7.0
9.0
11
25
50
100
75
125
150
C
15
25
20
125
75
8.0
V
I
,
TJ = 25
°
C
VGE = 10 V
12.5 V
15 V
20 V
17.5 V
TJ = 125
°
C
VGE = 10 V
12.5 V
15 V
20 V
17.5 V
TJ = 125
°
C
25
°
C
VCE = 100 V
VGE = 15 V
80 s PULSE WIDTH
IC = 20 A
10 A
15 A
Cies
Coes
Cres
TJ = 25
°
C
VGE = 0
QT
Q2
Q1
TJ = 25
°
C
VCC = 300 V
IC = 20 A
10
30
50
2400
1600
100
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