- 您現在的位置：買賣IC網 > PDF目錄371104 > MGP4N60E (MOTOROLA INC) Insulated Gate Bipolar Transistor PDF資料下載
參數資料
| 型號： | MGP4N60E |
| 廠商： | MOTOROLA INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數： | 1/6頁 |
| 文件大小： | 124K |
| 代理商： | MGP4N60E |
1
Motorola, Inc. 1997
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600 V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. This new E–series introduces an Energy–efficient,
ESD protected, and short circuit rugged device.
Industry Standard TO–220 Package
High Speed: Eoff = 55 J/A typical at 125
°
C
High Voltage Short Circuit Capability – 10 s minimum at 125
°
C, 400 V
Low On–Voltage 2.0 V typical at 3.0 A, 125
°
C
Robust High Voltage Termination
ESD Protection Gate–Emitter Zener Diodes
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCGR
VGE
IC25
IC90
ICM
600
Vdc
Collector–Gate Voltage (RGE = 1.0 M
)
Gate–Emitter Voltage — Continuous
600
Vdc
±
20
Vdc
Collector Current — Continuous @ TC = 25
°
C
— Continuous @ TC = 90
°
C
— Repetitive Pulsed Current (1)
6.0
4.0
8.0
Adc
Apk
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
80
0.64
Watts
W/
°
C
Operating and Storage Junction Temperature Range
TJ, Tstg
tsc
–55 to 150
°
C
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125
°
C, RG = 20
)
10
s
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
R
θ
JC
R
θ
JA
2.0
65
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
TL
260
°
C
Mounting Torque, 6–32 or M3 screw
10 lbf in (1.13 N m)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
Order this document
by MGP4N60E/D
SEMICONDUCTOR TECHNICAL DATA
IGBT IN TO–220
4.0 A @ 90
°
C
6.0 A @ 25
°
C
600 VOLTS
SHORT CIRCUIT RATED
LOW ON–VOLTAGE
CASE 221A–06
TO–220AB
C
E
G
G
C
E
相關PDF資料 |
PDF描述 |
|---|---|
| MGP4N60E | Insulated Gate Bipolar Transistor |
| MGP7N60E | Insulated Gate Bipolar Transistor |
| MGP7N60E | Insulated Gate Bipolar Transistor |
| MGS05N60D | Insulated Gate Bipolar Transistor |
| MGS05N60D | Insulated Gate Bipolar Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MGP4N60ED | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ONS 功能描述:ON SEMICONDUCTOR NXF7C 制造商:ON Semiconductor 功能描述: |
| MGP50-1000-B | 制造商:RCD 制造商全稱:RCD COMPONENTS INC. 功能描述:METAL FILM MELF RESISTORS |
| MGP50-1000-C | 制造商:RCD 制造商全稱:RCD COMPONENTS INC. 功能描述:METAL FILM MELF RESISTORS |
| MGP50-1000-D | 制造商:RCD 制造商全稱:RCD COMPONENTS INC. 功能描述:METAL FILM MELF RESISTORS |
| MGP50-1000-F | 制造商:RCD 制造商全稱:RCD COMPONENTS INC. 功能描述:METAL FILM MELF RESISTORS |
發布緊急采購，3分鐘左右您將得到回復。