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參數資料
| 型號： | MGP4N60E |
| 廠商： | MOTOROLA INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數： | 3/6頁 |
| 文件大小： | 124K |
| 代理商： | MGP4N60E |
3
Motorola TMOS Power MOSFET Transistor Device Data
Figure 1. Output Characteristics, TJ = 25
°
C
Figure 2. Output Characteristics, TJ = 125
°
C
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
Figure 5. Capacitance Variation
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
8.0
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
15
6.0
3.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
13
17
5.0
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
15
7.5
2.5
0
TJ, JUNCTION TEMPERATURE (
°
C)
–25
–50
2.0
1.8
1.6
1.4
0
15
5.0
10
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
800
400
200
0
QG, TOTAL GATE CHARGE (nC)
5.0
0
20
16
12
4.0
0
10
I
I
C
V
0
2.0
4.0
7.0
9.0
11
25
50
100
75
125
150
C
15
25
20
25
15
8.0
V
I
,
TJ = 25
°
C
VGE = 10 V
12.5 V
15 V
20 V
17.5 V
TJ = 125
°
C
25
°
C
VCE = 100 V
5 s PULSE WIDTH
VGE = 15 V
80 s PULSE WIDTH
IC = 3.0 A
1.5 A
2.0 A
Cies
Coes
Cres
TJ = 25
°
C
VGE = 0
QT
Q2
Q1
TJ = 25
°
C
VCC = 300 V
IC = 3.0 A
12
9.0
6.0
8.0
0
15
6.0
3.0
0
2.0
4.0
TJ = 125
°
C
VGE = 10 V
12.5 V
15 V
20 V
17.5 V
12
9.0
6.0
5.0
12.5
10
600
20
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MGP4N60ED | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ONS 功能描述:ON SEMICONDUCTOR NXF7C 制造商:ON Semiconductor 功能描述: |
| MGP50-1000-B | 制造商:RCD 制造商全稱:RCD COMPONENTS INC. 功能描述:METAL FILM MELF RESISTORS |
| MGP50-1000-C | 制造商:RCD 制造商全稱:RCD COMPONENTS INC. 功能描述:METAL FILM MELF RESISTORS |
| MGP50-1000-D | 制造商:RCD 制造商全稱:RCD COMPONENTS INC. 功能描述:METAL FILM MELF RESISTORS |
| MGP50-1000-F | 制造商:RCD 制造商全稱:RCD COMPONENTS INC. 功能描述:METAL FILM MELF RESISTORS |
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