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參數資料
| 型號： | MGP21N60E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 31 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數： | 6/6頁 |
| 文件大小： | 127K |
| 代理商： | MGP21N60E |
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Motorola TMOS Power MOSFET Transistor Device Data
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