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參數(shù)資料
| 型號(hào)： | MGS13002D |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 0.5 A, 600 V, N-CHANNEL IGBT, TO-226AE |
| 封裝： | CASE 029-05, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 135K |
| 代理商： | MGS13002D |
1
Motorola, Inc. 1997
N–Channel Enhancement–Mode Silicon Gate
This IGBT contains a built–in free wheeling diode and a gate
protection zener. Fast switching characteristics result in efficient
operation at higher frequencies.
Built–In Free Wheeling Diode
Built–In Gate Protection Zener Diode
Industry Standard Package (TO92 — 1.0 Watt)
High Speed Eoff: Typical 6.5 J @ IC = 0.3 A; TC = 125
°
C and
dV/dt = 1000 V/ s
Robust High Voltage Termination
Robust Turn–Off SOA
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Parameters
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCGR
VGES
IC25
IC90
ICM
600
Vdc
Collector–Gate Voltage (RGE = 1.0 M
)
Gate–Emitter Voltage — Continuous
600
Vdc
±
15
Vdc
Collector Current — Continuous @ TC = 25
°
C
— Continuous @ TC = 90
°
C
— Repetitive Pulsed Current (1)
0.5
0.3
2.0
Adc
Total Power Dissipation @ TC = 25
°
C
Operating and Storage Junction Temperature Range
PD
1.0
Watt
TJ, Tstg
–55 to 150
°
C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
R
θ
JC
R
θ
JA
25
125
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
TL
260
°
C
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS
(TC
≤
150
°
C)
Single Pulse Drain–to–Source Avalanche
Energy – Starting @ TC = 25
°
C
Energy – Starting
@ TC = 125
°
C
VCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25
(1) Pulse width is limited by maximum junction temperature repetitive rating.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
EAS
125
40
mJ
Designer’s is a trademark of Motorola, Inc.
Order this document
by MGS13002D/D
SEMICONDUCTOR TECHNICAL DATA
POWERLUX
IGBT
0.5 A @ 25
°
C
600 V
CASE 029–05
TO–226AE
TO92 (1.0 WATT)
E
C
G
C
E
G
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGS13002DD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
| MGS151205 | 制造商:Cosel Usa Inc 功能描述:Power Supply;DC-DC;5V@3A;9-18V In;Encapsulated;Thru Hole;Switching;MG Series 制造商:Cosel Usa Inc 功能描述:MG Series 15 W Single Output 5 V Isolated DC/DC Power Supply 制造商:Cosel Usa Inc 功能描述:Module DC-DC 1-OUT 5V 3A 15W 6-Pin |
| MGS151205-G | 制造商:Cosel Usa Inc 功能描述:Module DC-DC 1-OUT 5V 3A 15W 6-Pin |
| MGS151205-R | 制造商:Cosel Usa Inc 功能描述:Module DC-DC 1-OUT 5V 3A 15W 6-Pin |
| MGS151212 | 制造商:Cosel Usa Inc 功能描述:Power Supply;DC-DC;12V@1.3A;9-18V In;Encapsulated;Thru Hole;Switching;MG Series 制造商:Cosel Usa Inc 功能描述:MG Series 15.6 W Single Output 12 V Isolated DC/DC Power Supply 制造商:Cosel Usa Inc 功能描述:Module DC-DC 1-OUT 12V 1.3A 15.6W 6-Pin |
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