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參數資料
| 型號： | MGS13002D |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 0.5 A, 600 V, N-CHANNEL IGBT, TO-226AE |
| 封裝： | CASE 029-05, 3 PIN |
| 文件頁數： | 2/6頁 |
| 文件大小： | 135K |
| 代理商： | MGS13002D |
2
Motorola Power Products Division Technical Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 250
μ
Adc)
Temperature Coefficient (Positive)
BVCES
600
—
680
0.7
—
—
Vdc
V/
°
C
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc, TC = 25
°
C)
(VCE = 600 Vdc, VGE = 0 Vdc, TC = 125
°
C)
Gate–Body Leakage Current (VGE =
±
15 Vdc, VCE = 0 Vdc)
ICES
ICES
—
—
0.1
5.0
5.0
50
μ
Adc
IGES
—
10
100
Adc
ON CHARACTERISTICS
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 0.3 Adc, TC = 25
°
C)
(VGE = 15 Vdc, IC = 0.3 Adc, TC = 125
°
C)
VCE(on)
—
—
1.6
1.5
2.0
—
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGE(th)
3.5
—
—
6.0
6.0
—
Vdc
mV/
°
C
Forward Transconductance (VCE = 10 Vdc, IC = 0.5 Adc)
gfe
0.3
0.42
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VCE = 20 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
20 Vdc V
Cies
Coes
Cres
—
75
100
pF
Output Capacitance
—
11
20
Transfer Capacitance
—
1.6
5.0
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 0.3 Adc, TC = 25
°
C)
(IEC = 0.3 Adc, TC = 125
°
C)
(IEC = 0.1 Adc, TC = 25
°
C)
(IEC = 0.1 Adc, TC = 125
°
C)
VFEC
—
—
—
—
5.0
5.2
2.3
2.3
6.0
—
3.0
—
Vdc
Reverse Recovery Time @ TC = 25
°
C
IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ s
trr
—
150
—
ns
Reverse Recovery Stored Charge
IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ s
QRR
—
35
—
C
SWITCHING CHARACTERISTICS (1)
Turn–Off Delay Time
(VCC = 300 Vdc, IC = 0.4 Adc,
3 0
VGE = 15 Vdc, L = 3.0 mH, RG = 25
,
TC = 25 C, dV/dt = 1000 V/ s)
Energy losses include “tail”
H R
td(off)
tf
Eoff
td(off)
tf
—
28
—
ns
Fall Time
—
150
—
Turn–Off Switching Loss
—
3.25
—
J
Turn–Off Delay Time
(VCC = 300 Vdc, IC = 0.4 Adc,
3 0
VGE = 15 Vdc, L = 3.0 mH, RG = 25
,
TC = 125 C, dV/dt = 1000 V/ s)
Energy losses include “tail”
H R
—
21
—
ns
Fall Time
—
280
—
Turn–Off Switching Loss
Eoff
QT
—
8.0
—
J
Gate Charge
(VCC = 300 Vdc, IC = 0.3 Adc,
VGE = 15 Vdc)
—
6.4
—
nC
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MGS13002DD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
| MGS151205 | 制造商:Cosel Usa Inc 功能描述:Power Supply;DC-DC;5V@3A;9-18V In;Encapsulated;Thru Hole;Switching;MG Series 制造商:Cosel Usa Inc 功能描述:MG Series 15 W Single Output 5 V Isolated DC/DC Power Supply 制造商:Cosel Usa Inc 功能描述:Module DC-DC 1-OUT 5V 3A 15W 6-Pin |
| MGS151205-G | 制造商:Cosel Usa Inc 功能描述:Module DC-DC 1-OUT 5V 3A 15W 6-Pin |
| MGS151205-R | 制造商:Cosel Usa Inc 功能描述:Module DC-DC 1-OUT 5V 3A 15W 6-Pin |
| MGS151212 | 制造商:Cosel Usa Inc 功能描述:Power Supply;DC-DC;12V@1.3A;9-18V In;Encapsulated;Thru Hole;Switching;MG Series 制造商:Cosel Usa Inc 功能描述:MG Series 15.6 W Single Output 12 V Isolated DC/DC Power Supply 制造商:Cosel Usa Inc 功能描述:Module DC-DC 1-OUT 12V 1.3A 15.6W 6-Pin |
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