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參數資料
| 型號： | MGSF1N02ELT3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET |
| 中文描述： | 750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數： | 3/6頁 |
| 文件大小： | 187K |
| 代理商： | MGSF1N02ELT3 |
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
R
(
R
Figure 3. On–Resistance versus Drain Current
0
0.2
0.4
0.6
0.8
0.04
0.1
0.12
Figure 4. On–Resistance versus Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 5. On–Resistance Variation with Temperature
0.6
1
0.001
0.1
1
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 6. Gate Charge
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
I
25
°
C
VGS = 4.5 V
VGS = 10 V
ID = 2 A
–55
–5
45
95
145
TJ = 150
°
C
0.08
0.7
0.8
0.9
0
0.2
0.4
0.6
0.06
0.01
–55
°
C
25
°
C
0.8
Figure 8. Capacitance
R
0
0.4
0.8
1.2
1.6
0.04
0.1
0.12
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
0.08
0.06
V
0
10
6
2
0
QT, TOTAL GATE CHARGE (pC)
8
4
1000
6000
VDS = 16 V
TJ = 25
°
C
2000
ID = 2.0 A
3000
VDS, DRAIN–TO–SOURCE VOLTAGE (Volts)
C
0
15
20
5
10
Ciss
Coss
Crss
1000
100
VGS = 0 V
f = 1 MHz
TJ = 25
°
C
10
0.1
0.3
0.5
0.7
150
°
C
–55
°
C
0.14
0.09
0.11
0.07
0.05
0.13
0.2
0.6
1
1.4
1.1
1.5
1.2
1.3
1.4
VGS = 4.5 V
ID = 1 A
5000
4000
1
0.9
1
0.18
0.2
0.16
0.14
1.8
2
25
°
C
150
°
C
–55
°
C
1.6
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MGSF1N02LT1 | 功能描述:MOSFET 20V 750mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MGSF1N02LT1 | 制造商:ON Semiconductor 功能描述:MOSFET N SOT-23 |
| MGSF1N02LT1_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23 |
| MGSF1N02LT1G | 功能描述:MOSFET NFET SOT23 20V 75mA 90mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MGSF1N02LT3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 750 mAmps, 20 Volts |
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