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參數(shù)資料
| 型號(hào)： | MGSF1N02ELT3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET |
| 中文描述： | 750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 187K |
| 代理商： | MGSF1N02ELT3 |
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
D
J
K
L
A
C
B S
H
G
V
3
1
2
CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)
DIM
A
B
C
D
G
H
J
K
L
S
V
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0180
0.0350
0.0830
0.0177
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0236
0.0401
0.0984
0.0236
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.45
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.60
1.02
2.50
0.60
MILLIMETERS
INCHES
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
STYLE 21:
PIN 1.
GATE
SOURCE
DRAIN
2.
3.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGSF1N02LT3 | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| MGSF1N03LT1 | CHOKE, POWER, SHIELDED, 47UH; Inductor type:Shielded Power Choke; Inductance:47uH; Tolerance, inductance:30%; Resistance:250mR; Frequency, resonant:10MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes |
| MGSF1N03LT1 | Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23 |
| MGSF1N03LT3 | Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23 |
| MGSF1N03LT3G | Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGSF1N02LT1 | 功能描述:MOSFET 20V 750mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MGSF1N02LT1 | 制造商:ON Semiconductor 功能描述:MOSFET N SOT-23 |
| MGSF1N02LT1_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23 |
| MGSF1N02LT1G | 功能描述:MOSFET NFET SOT23 20V 75mA 90mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MGSF1N02LT3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 750 mAmps, 20 Volts |
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