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參數資料
| 型號： | MH16S72APHB-6 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
| 中文描述： | 1207959552位（16,777,216 - Word的72位）同步DRAM |
| 文件頁數： | 15/52頁 |
| 文件大小： | 1045K |
| 代理商： | MH16S72APHB-6 |
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MH16S72AMA -8,-10,-12
1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM
MITSUBISHI LSIs
( / 52 )
15
MITSUBISHI
ELECTRIC
5. Mar.1997
Preliminary Spec.
Some contents are subject to change without notice.
MIT-DS-0128-0.0
POWER ON SEQUENCE
Before starting normal operation, the following power on sequence is necessary to prevent a
SDRAM from damaged or malfunctioning.
1. Apply power and start clock. Attempt to maintain CKE high, DQMB0-7 high and NOP
condition at the inputs.
2. Maintain stable power, stable cock, and NOP input conditions for a minimum of 500μs.
3. Issue precharge commands for all banks. (PRE or PREA)
4. After all banks become idle state (after tRP), issue 8 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
After these sequence, the SDRAM is idle state and ready for normal operation.
MODE REGISTER
Burst Length, Burst Type and /CAS Latency can be programmed by setting the mode
register(MRS). The mode register stores these date until the next MRS command, which may
be issue when both banks are in idle state. After tRSC from a MRS command, the SDRAM is
ready for new command.
R:Reserved for Future Use
/S
/RAS
/CAS
/WE
BA0,1 A11-0
CK
V
BL
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
BURST
LENGTH
BT= 0
1
2
4
8
R
R
R
R
BT= 1
1
2
4
8
R
R
R
R
0
1
BURST
TYPE
SEQUENTIAL
INTERLEAVED
A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA1
BA0
0
0
0
0
0
LTMODE
BT
BL
0
0
CL
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
LATENCY
MODE
/CAS LATENCY
2
3
R
R
R
R
R
R
相關PDF資料 |
PDF描述 |
|---|---|
| MH16S72APHB-7 | 1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
| MH16S72APHB-8 | 1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
| MH16S72BAMD-10 | 1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM |
| MH16S72BAMD-6 | 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH16S72BAMD-7 | 1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MH16S72APHB-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
| MH16S72APHB-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
| MH16S72AVJB-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH16S72BAMD-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM |
| MH16S72BAMD-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
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