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| 型號： | MH16S72APHB-6 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
| 中文描述： | 1207959552位（16,777,216 - Word的72位）同步DRAM |
| 文件頁數(shù)： | 7/52頁 |
| 文件大小： | 1045K |
| 代理商： | MH16S72APHB-6 |
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MH16S72AMA -8,-10,-12
1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM
MITSUBISHI LSIs
( / 52 )
7
MITSUBISHI
ELECTRIC
5. Mar.1997
Preliminary Spec.
Some contents are subject to change without notice.
MIT-DS-0128-0.0
BASIC FUNCTIONS
The MH16S72AMA provides basic functions,bank(row)activate,burst read / write,
bank(row)precharge,and auto / self refresh.
Each command is defined by control signals of /RAS,/CAS and /WE at CK rising edge. In
addition to 3 signals,/S,CKE and A10 are used as chip select,refresh option,and
precharge option,respectively.
To know the detailed definition of commands please see the command truth table.
/S
Chip Select : L=select, H=deselect
/RAS
Command
/CAS
Command
/WE
Command
CKE
Refresh Option @refresh
command
Precharge Option @precharge or read/write
command
A10
CK
define basic commands
Activate(ACT) [/RAS =L, /CAS = /WE =H]
Read(READ) [/RAS =H,/CAS =L, /WE =H]
Write(WRITE) [/RAS =H, /CAS = /WE =L]
Precharge(PRE) [/RAS =L, /CAS =H,/WE =L]
Auto-Refresh(REFA) [/RAS =/CAS =L, /WE =CKE =H]
ACT command activates a row in an idle bank indicated by BA.
READ command starts burst read from the active bank indicated by BA.First output
data appears after /CAS latency. When A10 =H at this command,the bank is
deactivated after the burst read(auto-precharge,
READA
).
WRITE command starts burst write to the active bank indicated by BA. Total data
length to be written is set by burst length. When A10 =H at this command, the bank is
deactivated after the burst write(auto-precharge,
WRITEA
).
PRE command deactivates the active bank indicated by BA. This command also
terminates burst read / write operation. When A10 =H at this command, both banks are
deactivated(precharge all,
PREA
).
PEFA command starts auto-refresh cycle. Refresh address including bank address are
generated internally. After this command, the banks are precharged automatically.
相關(guān)PDF資料 |
PDF描述 |
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| MH16S72APHB-7 | 1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
| MH16S72APHB-8 | 1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
| MH16S72BAMD-10 | 1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM |
| MH16S72BAMD-6 | 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH16S72BAMD-7 | 1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MH16S72APHB-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
| MH16S72APHB-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
| MH16S72AVJB-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH16S72BAMD-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM |
| MH16S72BAMD-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
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