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參數資料
| 型號： | MLD2N06CL |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | VOLTAGE CLAMPED CURRENT LIMITING MOSFET |
| 中文描述： | 2 A, 58 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數： | 3/6頁 |
| 文件大小： | 194K |
| 代理商： | MLD2N06CL |
3
Motorola TMOS Power MOSFET Transistor Device Data
THE SMARTDISCRETES CONCEPT
From a standard power MOSFET process, several active
and passive elements can be obtained that provide on–chip
protection to the basic power device. Such elements require
only a small increase in silicon area and/or the addition of one
masking layer to the process. The resulting device exhibits
significant improvements in ruggedness and reliability as well
as system cost reduction. The SMARTDISCRETES device
functions can now provide an economical alternative to smart
power ICs for power applications requiring low on–resistance,
high voltage and high current.
These devices are designed for applications that require a
rugged power switching device with short circuit protection
that can be directly interfaced to a microcontroller unit (MCU).
Ideal applications include automotive fuel injector driver,
incandescent lamp driver or other applications where a high
in–rush current or a shorted load condition could occur.
OPERATION IN THE CURRENT LIMIT MODE
The amount of time that an unprotected device can with-
stand the current stress resulting from a shorted load before
its maximum junction temperature is exceeded is dependent
upon a number of factors that include the amount
of heatsinking that is provided, the size or rating of the device,
its initial junction temperature, and the supply voltage. Without
some form of current limiting, a shorted load can raise a de-
vice’s junction temperature beyond the maximum rated oper-
ating temperature in only a few milliseconds.
Even with no heatsink, the MLD2N06CL can withstand a
shorted load powered by an automotive battery (10 to 14
Volts) for almost a second if its initial operating temperature is
under 100
°
C. For longer periods of operation in the current–
limited mode, device heatsinking can extend operation from
several seconds to indefinitely depending on the amount of
heatsinking provided.
SHORT CIRCUIT PROTECTION AND THE EFFECT OF
TEMPERATURE
The on–chip circuitry of the MLD2N06CL offers an integrated
means of protecting the MOSFET component from high in–rush
current or a shorted load. As shown in the schematic diagram,
the current limiting feature is provided by an NPN transistor and
integral resistors R1 and R2. R2 senses the current through the
MOSFET and forward biases the NPN transistor’s base as the
current increases. As the NPN turns on, it begins to pull gate
drive current through R1, dropping the gate drive voltage across
it, and thus lowering the voltage across the gate–to–source of
the power MOSFET and limiting the current. The current limit is
temperature dependent as shown in Figure 3, and decreases
from about 2.3 Amps at 25
°
C to about 1.3 Amps at 150
°
C.
Since the MLD2N06CL continues to conduct current and dis-
sipate power during a shorted load condition, it is important to
provide sufficient heatsinking to limit the device junction tempera-
ture to a maximum of 150
°
C.
The metal current sense resistor R2 adds about 0.4 ohms to
the power MOSFET’s on–resistance, but the effect of tempera-
ture on the combination is less than on a standard MOSFET due
to the lower temperature coefficient of R2. The on–resistance
variation with temperature for gate voltages of 4 and 5 Volts is
shown in Figure 5.
Back–to–back polysilicon diodes between gate and source
provide ESD protection to greater than 2 kV, HBM. This on–chip
protection feature eliminates the need for an external Zener
diode for systems with potentially heavy line transients.
Figure 3. ID(lim) Variation
With Temperature
Figure 4. RDS(on) Variation With
Gate–To–Source Voltage
Figure 5. On–Resistance Variation With
Temperature
I
TJ, JUNCTION TEMPERATURE (
°
C)
VGS = 5 V
VDS = 10 V
–50
0
50
100
150
5
4
3
2
1
0
6
R
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID = 1 A
0
1
2
3
9
10
1.0
0.8
0.6
0.4
0.2
0
4
5
6
7
8
TJ = –50
°
C
100
°
C
25
°
C
R
TJ, JUNCTION TEMPERATURE (
°
C)
ID = 1 A
–50
50
0
100
150
0.6
0.4
0.3
0.2
0.1
0
0.5
VGS = 4 V
VGS = 5 V
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相關代理商/技術參數 |
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| MLD2N06CLG | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SMARTDISCRETES TM MOSFET 2 Amp, 62 Volts, Logic Level N−Channel DPAK |
| MLD2N06CLT4 | 功能描述:MOSFET 10V 4.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MLD2N06CLT4G | 功能描述:MOSFET 10V 4.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| MLD5006 010X | 制造商:Belden Inc 功能描述:6 #50 UM PBT PE AMD PE |
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