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參數資料
| 型號： | MMBT2222 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 功率晶體管 |
| 英文描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 中文描述： | 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數： | 4/8頁 |
| 文件大小： | 253K |
| 代理商： | MMBT2222 |
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 5. Turn–On Time
IC, COLLECTOR CURRENT (mA)
70
50
100
200
t
10
20
70
5.0
100
5.0 7.0
30
50
200
10
7.0
30
20
IC/IB = 10
TJ = 25
°
C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
3.0
2.0
300
500
500
t
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. Turn–Off Time
IC, COLLECTOR CURRENT (mA)
10
20
70
100
5.0 7.0
30
50
200
300
500
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25
°
C
t
′
s = ts – 1/8 tf
tf
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
N
1.0 2.0
5.0 10
20
50
0.2
0.5
0
0.01 0.02
100
N
0.05
RS = OPTIMUM
RS =
SOURCE
RS =
RESISTANCE
IC = 1.0 mA, RS = 150
500
μ
A, RS = 200
100
μ
A, RS = 2.0 k
50
μ
A, RS = 4.0 k
f = 1.0 kHz
IC = 50
μ
A
100
μ
A
500
μ
A
1.0 mA
4.0
6.0
8.0
10
2.0
0
50
100
200
500
1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
3.0
5.0
7.0
10
2.0
0.1
C
1.0
2.0 3.0
5.0 7.0 10
20 30
50
0.2 0.3
0.5 0.7
Ccb
20
30
Ceb
Figure 10. Current–Gain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
500
f
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70 100
VCE = 20 V
TJ = 25
°
C
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| MMBT2222LT1 | General Purpose Transistors(NPN Silicon) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBT2222 | 制造商:Fairchild Semiconductor Corporation 功能描述:RF Bipolar Transistor |
| MMBT2222_07 | 制造商:DIOTEC 制造商全稱:Diotec Semiconductor 功能描述:Surface Mount Si-Epi-Planar Switching Transistors |
| MMBT2222_Q | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222A | 功能描述:兩極晶體管 - BJT SOT-23 NPN GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222A MCC | 制造商:MCC 功能描述:General Purpose NPN SM TRANS SOT-23 制造商:MCC 功能描述:General Purpose NPN SM TRANS SOT-23 - free partial T/R at 500. |
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