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參數(shù)資料
| 型號(hào)： | MMBT2222 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 功率晶體管 |
| 英文描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 中文描述： | 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 253K |
| 代理商： | MMBT2222 |
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
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PDF描述 |
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| MMBT2222A | Surface mount Si-Epitaxial PlanarTransistors |
| MMBT2222ALT1 | General Purpose Transistors(NPN Silicon) |
| MMBT2222AWT1 | Preliminary Information General Purpose Transistors |
| MMBT2222LT1 | General Purpose Transistors(NPN Silicon) |
| MMBT2369ALT1 | Switching Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2222 | 制造商:Fairchild Semiconductor Corporation 功能描述:RF Bipolar Transistor |
| MMBT2222_07 | 制造商:DIOTEC 制造商全稱:Diotec Semiconductor 功能描述:Surface Mount Si-Epi-Planar Switching Transistors |
| MMBT2222_Q | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222A | 功能描述:兩極晶體管 - BJT SOT-23 NPN GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222A MCC | 制造商:MCC 功能描述:General Purpose NPN SM TRANS SOT-23 制造商:MCC 功能描述:General Purpose NPN SM TRANS SOT-23 - free partial T/R at 500. |
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