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參數資料
| 型號： | MMBT2369ALT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Switching Transistors(NPN Silicon) |
| 中文描述： | 開關晶體管（NPN硅） |
| 文件頁數： | 2/8頁 |
| 文件大小： | 304K |
| 代理商： | MMBT2369ALT1 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(continued) (TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain (3)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 0.35 Vdc)
(IC = 10 mAdc, VCE = 0.35 Vdc, TA = –55
°
C)
(IC = 30 mAdc, VCE = 0.4 Vdc)
(IC = 100 mAdc, VCE = 2.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369
MMBT2369A
hFE
40
—
40
20
30
20
20
—
—
—
—
—
—
—
120
120
—
—
—
—
—
—
Collector–Emitter Saturation Voltage (3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc, TA = +125
°
C)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
VCE(sat)
—
—
—
—
—
—
—
—
—
—
0.25
0.20
0.30
0.25
0.50
Vdc
Base–Emitter Saturation Voltage (3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc, TA = –55
°
C)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
SMALL–SIGNAL CHARACTERISTICS
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
VBE(sat)
0.7
—
—
—
—
—
—
—
0.85
1.02
1.15
1.60
Vdc
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
—
4.0
pF
Small Signal CurrentGain
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
hfe
5.0
—
—
—
Storage Time
(IB1 = IB2 = IC = 10 mAdc)
ts
—
5.0
13
ns
Turn–On Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc)
ton
—
8.0
12
ns
Turn–Off Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc)
toff
—
10
18
ns
3. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBT2369ALT1G | 功能描述:兩極晶體管 - BJT 200mA 15V Switching NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2369ALT3 | 功能描述:兩極晶體管 - BJT 200mA 15V Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2369ALT3G | 功能描述:兩極晶體管 - BJT 200mA 15V Switching NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2369-G | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:GENERAL PURPOSE TRANSISTORS |
| MMBT2369L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Switcing Transistors |
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