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參數資料
| 型號： | MMBT2907 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | PNP (GENERAL PURPOSE TRANSISTOR) |
| 中文描述： | 進步黨（通用晶體管） |
| 文件頁數： | 2/4頁 |
| 文件大小： | 76K |
| 代理商： | MMBT2907 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(1)
Symbol
Min
Max
Unit
DC Current Gain (1)
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)
(IC = –500 mAdc, VCE = –10 Vdc)
Collector–Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
Base–Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
SMALL–SIGNAL CHARACTERISTICS
HFE
75
100
100
100
50
—
—
—
—
—
—
VCE(sat)
—
—
–0.4
–1.6
Vdc
VBE(sat)
—
—
–1.3
–2.6
Vdc
Current–Gain — Bandwidth Product
(IC = –50 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
200
—
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
8.0
pF
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Cibo
—
30
pF
Turn–On Time
(VCC = –30 Vdc,
IC = –150 mAdc, IB1 = –15 mAdc)
IC = 150 mAdc, IB1 = 15 mAdc)
ton
td
tr
ts
tf
toff
—
45
Delay Time
—
10
Rise Time
—
40
ns
Storage Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = 15 mAdc)
6 0 Vdc I
—
80
Fall Time
—
30
Turn–Off Time
—
100
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBT2907 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR PNP SMD SOT-23 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR, PNP, SMD, SOT-23 |
| MMBT2907_07 | 制造商:DIOTEC 制造商全稱:Diotec Semiconductor 功能描述:Surface Mount Si-Epi-Planar Switching Transistors |
| MMBT2907_D87Z | 功能描述:兩極晶體管 - BJT PNP Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2907A | 功能描述:兩極晶體管 - BJT SOT-23 PNP GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2907A MCC | 制造商:MCC 功能描述:General Purpose PNP SM TRANS SOT-23 制造商:MCC 功能描述:General Purpose PNP SM TRANS SOT-23 - free partial T/R at 500. |
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