| 型號 | 廠商 | 描述 |
| mmbt2907 2 3 4 |
SAMSUNG SEMICONDUCTOR CO. LTD. | PNP (GENERAL PURPOSE TRANSISTOR) |
| mmbt2907alt3 2 3 4 |
ON SEMICONDUCTOR | General Purpose Transistors |
| mmbt2907alt3g 2 3 4 |
ON SEMICONDUCTOR | General Purpose Transistors |
| mmbt2907awt1g 2 3 4 |
ON SEMICONDUCTOR | General Purpose Transistor PNP Silicon |
| mmbt2907a 2 3 4 |
DIOTEC SEMICONDUCTOR AG | Surface mount Si-Epitaxial PlanarTransistors |
| mmbt2907 2 3 4 |
DIOTEC SEMICONDUCTOR AG | Surface mount Si-Epitaxial PlanarTransistors |
| mmbt2907awt1 2 3 4 |
樂山無線電股份有限公司 | General Purpose Transistor(PNP Silicon) |
| mmbt3416lt3 2 3 4 5 6 7 8 |
MOTOROLA INC | General Purpose Amplifier |
| mmbt3416lt3 2 3 4 5 6 7 8 |
ON SEMICONDUCTOR | General Purpose Amplifier(NPN Silicon) |
| mmbt5401lt1 2 3 4 5 6 |
MOTOROLA INC | High Voltage Transistor |
| mmbt5401 2 3 4 5 6 |
DIODES INC | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| mmbt5401-7 2 3 4 5 6 |
DIODES INC | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| mmbt5401w 2 3 4 5 6 |
Electronic Theatre Controls, Inc. | Mini size of Discrete semiconductor elements |
| mmbt5401 2 3 4 5 6 |
Electronic Theatre Controls, Inc. | Mini size of Discrete semiconductor elements |
| mmbt5401lt1 2 3 4 5 6 |
ON SEMICONDUCTOR | High Voltage Transistor(PNP Silicon) |
| mmbt5401lt3 2 3 4 5 6 |
ON SEMICONDUCTOR | High Voltage Transistor(PNP Silicon) |
| mmbt5401lt3g 2 3 4 5 6 |
ON SEMICONDUCTOR | High Voltage Transistor(PNP Silicon) |
| mmbt5401lt1g 2 3 4 5 6 |
ON SEMICONDUCTOR | High Voltage Transistor(PNP Silicon) |
| mmbt5401lt1 2 3 4 5 6 |
樂山無線電股份有限公司 | High Voltage Transistor(PNP Silicon) |
| mmbt5401 2 3 4 5 6 |
Transys Electronics Ltd. | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| mmbt5401 2 3 4 5 6 |
智威科技股份有限公司 | HIGH VOLTAGE TRANSISTOR PNP SILICON |
| mmbt5550lt1 2 3 4 5 6 |
MOTOROLA INC | High Voltage Transistors |
| mmbt5550 2 3 4 5 6 |
SAMSUNG SEMICONDUCTOR CO. LTD. | High Voltage FET-Input Operational Amplifier 8-SO PowerPAD |
| mmbt5550 2 3 4 5 6 |
Electronic Theatre Controls, Inc. | Mini size of Discrete semiconductor elements |
| mmbt5550lt1g 2 3 4 5 6 |
ON SEMICONDUCTOR | High Voltage Transistors |
| mmbt5550 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | NPN General Purpose Amplifier |
| mmbt5550lt1 2 3 4 5 6 |
樂山無線電股份有限公司 | High Voltage Transistors(NPN Silicon) |
| mmbt5550 2 3 4 5 6 |
智威科技股份有限公司 | HIGH VOLTAGE TRANSISTOR NPN SILICON |
| mmbt6427lt1 2 3 4 5 6 7 8 |
MOTOROLA INC | Darlington Transistor |
| mmbt6427-7 2 3 4 5 6 7 8 |
DIODES INC | NPN SURFACE MOUNT DARLINGTON TRANSISTOR |
| mmbt6427 2 3 4 5 6 7 8 |
DIODES INC | 250MHz, Rail-to-Rail I/O, CMOS Quad Operational Amplifier 14-SOIC -40 to 125 |
| mmbt6427 2 3 4 5 6 7 8 |
SAMSUNG SEMICONDUCTOR CO. LTD. | NPN (DARLINGTON TRANSISTOR) |
| mmbt6427 2 3 4 5 6 7 8 |
Electronic Theatre Controls, Inc. | 250MHz, Rail-to-Rail I/O, CMOS Quad Operational Amplifier 14-SOIC -40 to 125 |
| mmbt6427lt1 2 3 4 5 6 7 8 |
ON SEMICONDUCTOR | Darlington Transistor(NPN Silicon) |
| mmbt6427 2 3 4 5 6 7 8 |
FAIRCHILD SEMICONDUCTOR CORP | NPN Darlington Transistor |
| mmbt6520lt1 2 3 4 5 6 7 8 |
MOTOROLA INC | High Voltage Transistor |
| mmbt6520 2 3 4 5 6 7 8 |
Electronic Theatre Controls, Inc. | Mini size of Discrete semiconductor elements |
| mmbt6520 2 3 4 5 6 7 8 |
ON SEMICONDUCTOR | 1.8V, High CMR, RRIO Op Amp 14-TSSOP -40 to 125 |
| mmbt6520 2 3 4 5 6 7 8 |
樂山無線電股份有限公司 | High Voltage Transistor(PNP Silicon) |
| mmbt6520lt1 2 3 4 5 6 7 8 |
樂山無線電股份有限公司 | High Voltage Transistor(PNP Silicon) |
| mmbt9018 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
Electronic Theatre Controls, Inc. | Mini size of Discrete semiconductor elements |
| mmbth10 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
Diodes Inc. | High Speed Precision Transimpedance Amplifier 8-MSOP -40 to 125 |
| mmbth10-7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
DIODES INC | NPN SURFACE MOUNT VHF/UHF TRANSISTOR |
| mmbt5089 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Inductor RoHS Compliant: Yes |
| mmbt6429 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 250MHz, Rail-to-Rail I/O, CMOS Quad Operational Amplifier 14-TSSOP -40 to 125 |
| mmbt4125 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
SAMSUNG SEMICONDUCTOR CO. LTD. | PNP (GENERAL PURPOSE TRANSISTOR) |
| mmbt5088 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
SAMSUNG SEMICONDUCTOR CO. LTD. | NPN (LOW NOISE TRANSISTOR) |
| mmbt8050 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
Electronic Theatre Controls, Inc. | mini size of discrete semiconductor elements |
| mmbt8099 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
Electronic Theatre Controls, Inc. | RP12 (AW) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 3.3V; 4:1 Wide Input Voltage Range; 12 Watts Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Five-Sided Shield; No Derating to 61??C; Standard DIP24 Pinning; Efficiency to 88% |
| mmbta94 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
Electronic Theatre Controls, Inc. | Mini size of Discrete semiconductor elements |