- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371123 > MMBT5401LT3G (ON SEMICONDUCTOR) High Voltage Transistor(PNP Silicon) PDF資料下載
參數(shù)資料
| 型號： | MMBT5401LT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | High Voltage Transistor(PNP Silicon) |
| 中文描述： | 500 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 189K |
| 代理商： | MMBT5401LT3G |
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
D
J
K
L
A
C
B S
H
G
V
3
1
2
CASE 318–08
SOT–23 (TO–236AB)
ISSUE AE
STYLE 6:
PIN 1.
BASE
EMITTER
COLLECTOR
2.
3.
DIM
A
B
C
D
G
H
J
K
L
S
V
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0180
0.0350
0.0830
0.0177
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0236
0.0401
0.0984
0.0236
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.45
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.60
1.02
2.50
0.60
MILLIMETERS
INCHES
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA/EUROPE
: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
JAPAN
: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX
: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609
INTERNET
: http://Design–NET.com
HONG KONG
: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
相關PDF資料 |
PDF描述 |
|---|---|
| MMBT5401LT1G | High Voltage Transistor(PNP Silicon) |
| MMBT5401LT1 | High Voltage Transistor(PNP Silicon) |
| MMBT5401 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBT5401 | HIGH VOLTAGE TRANSISTOR PNP SILICON |
| MMBT5550LT1 | High Voltage Transistors |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT5401-T | 功能描述:兩極晶體管 - BJT 600mA 150V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5401-TP | 功能描述:兩極晶體管 - BJT 600mA 150V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5401WT1G | 制造商:ON Semiconductor 功能描述:MMBT5401WT1G - Tape and Reel |
| MMBT5550 | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5550 | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復。