- 您現在的位置：買賣IC網 > PDF目錄371123 > MMBT5401W (Electronic Theatre Controls, Inc.) Mini size of Discrete semiconductor elements PDF資料下載
參數資料
| 型號： | MMBT5401W |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Mini size of Discrete semiconductor elements |
| 中文描述： | 迷你型離散半導體元件 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 189K |
| 代理商： | MMBT5401W |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
–150
Vdc
Collector–Base Voltage
–160
Vdc
Emitter–Base Voltage
–5.0
Vdc
Collector Current — Continuous
–500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
PD
556
°
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
°
C
Derate above 25
°
C
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
TJ, Tstg
417
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
DEVICE MARKING
MMBT5401LT1 = 2L
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–150
—
Vdc
Collector–Base Breakdown Voltage
(IC = –100 Adc, IE = 0)
V(BR)CBO
–160
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –10 Adc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current
(VCB = –120 Vdc, IE = 0)
(VCB = –120 Vdc, IE = 0, TA = 100
°
C)
ICES
—
—
–50
–50
nAdc
μ
Adc
1. FR–5 = 1.0
2. Alumina = 0.4
0.75
0.3
0.062 in.
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBT5401LT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Motorola Preferred Device
COLLECTOR
3
1
BASE
2
EMITTER
相關PDF資料 |
PDF描述 |
|---|---|
| MMBT5401 | Mini size of Discrete semiconductor elements |
| MMBT5401LT1 | High Voltage Transistor(PNP Silicon) |
| MMBT5401LT3 | High Voltage Transistor(PNP Silicon) |
| MMBT5401LT3G | High Voltage Transistor(PNP Silicon) |
| MMBT5401LT1G | High Voltage Transistor(PNP Silicon) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBT5401WT1G | 制造商:ON Semiconductor 功能描述:MMBT5401WT1G - Tape and Reel |
| MMBT5550 | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5550 | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor |
| MMBT5550LT1 | 功能描述:兩極晶體管 - BJT 600mA 160V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT5550LT1G | 功能描述:兩極晶體管 - BJT SS HV XSTR NPN 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。