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參數(shù)資料
| 型號： | MMBTA20 |
| 廠商： | Motorola, Inc. |
| 英文描述： | 40 AMP MINI-ISO AUTOMOTIVE RELAY |
| 中文描述： | 通用放大器 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 413K |
| 代理商： | MMBTA20 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VEBO
IC
40
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance Junction to Ambient
RJA
PD
556
°
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
°
C
Derate above 25
°
C
300
2.4
mW
mW/
°
C
Thermal Resistance Junction to Ambient
RJA
TJ, Tstg
417
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
DEVICE MARKING
MMBTA20LT1 = 1C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 100 Adc, IC = 0)
V(BR)EBO
4.0
—
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
—
100
nAdc
1. FR–5 = 1.0
2. Alumina = 0.4
0.75
0.3
0.062 in.
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by MMBTA20LT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
COLLECTOR
3
1
BASE
2
EMITTER
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBTA20LT1 | General Purpose Amplifier (NPN Silicon) |
| MMBTA56LT1 | Driver Transistors |
| MMBTA56 | RP15 (FW) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 5V; 4:1 Wide Input Voltage Range; 15 Watts Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 65??C; Standard 2? x 1? Package and Pinning; Efficiency to 86% |
| MMBTA56-7 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBTA56 | PNP (DRIVER TRANSISTOR) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBTA20LT1 | 功能描述:兩極晶體管 - BJT 100mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA20LT1G | 功能描述:兩極晶體管 - BJT 100mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA28 | 功能描述:達林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBTA28 | 制造商:Fairchild Semiconductor Corporation 功能描述:SSOT-3 NPN:ROHS COMPLIANT |
| MMBTA28_Q | 功能描述:達林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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