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參數(shù)資料
| 型號(hào)： | Q62702-A1103 |
| 廠商： | SIEMENS AG |
| 英文描述： | CAP CER 2200PF 250VAC X1Y2 RAD |
| 中文描述： | 硅肖特基二極管（新加坡發(fā)展銀行申請(qǐng)到12GHz混頻器中的障礙型低電容） |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大小： | 101K |
| 代理商： | Q62702-A1103 |
BGC420
High Frequency Products
3
Edition A13, 05/99
Power Gain
versus Frequency
Vcc=3V, Icc=5mA
Gma
Gms
￥
S21
￥
2
dB
f
GHz
Icc
mA
Gma
Gms
dB
Power Gain
versus Device Current
Vcc=3V
￥
S21
￥
2
S21
2
versus Frequency and Temperature
Vcc=3V, Icc=7mA
f
GHz
dB
=
-40°C
= +27
°C
= +85
°C
28
26
24
22
20
18
16
14
12
10
0.2 0.6 1 1.4 1.8 2.2 2.6 3
Gms
Gma
IS21I
2
50
45
40
35
30
25
20
15
10
5
0
0.1
1
10
f=1 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-A1104 | CAP CER 4700PF 250VAC X1Y2 RAD |
| Q62702-A1105 | CAP CER 4700PF 250VAC X1Y2 RAD |
| Q62702-A113 | CAP CER 3300PF 250VAC X1Y2 RAD |
| Q62702-A1145 | CAP CER 3300PF 250VAC X1Y2 RAD |
| Q62702-A1159 | Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-A1104 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) |
| Q62702-A1105 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diodes (Zero bias diode array for mixer and detectors up to GHz frequencies Crossover ring quad) |
| Q62702-A113 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Switching Diodes (High-speed, high-voltage switch) |
| Q62702-A1145 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
| Q62702-A1159 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
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