| 型號 | 廠商 | 描述 |
| q62702-a1261 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| q62702-a1264 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | POT 50K OHM CARBON 1/2W |
| q62702-a1265 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
| q62702-a1266 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
| q62702-a1267 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| q62702-a1270 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
| q62702-a1271 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) |
| q62702-a1272 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) |
| q62702-a1273 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) |
| q62702-a1274 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) |
| q62702-c1831 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | RSO-S_D(Z) Series - Econoline Regulated DC-DC Converters; Input Voltage (Vdc): 05V; Output Voltage (Vdc): 15V; Power: 1W; 2:1 and 4:1 Wide Input Voltage Ranges; 1kVDC, 2kVD & 3kVDC Isolation; UL94V-0 Package Material; Continuous Short Circuit Protectionwith Current Foldback; Low Noise; No External Capacitor needed; Efficiency to 83% |
| q62702-c1832 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon Darlington Transistors (For general AF applications High collector current) |
| q62702-c311-v2 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | ECONOLINE: RSS & RSD - 1kVDC and 3KVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 85%- SMD5, SMD8, SMD10 and SMD12 case styles |
| q62702-c311-v3 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
| q62702-c311-v4 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
| q62702-c327-v3 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON PLANAR TRANSISTORS |
| q62702-d1041 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) |
| q62702-d106-p 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN SILICON TRANSISTORS |
| q62702-f1238 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
| q62702-f1239 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
| q62702-f1271 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
| q62702-f1291 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
| q62702-f1292 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications) |
| q62702-f1296 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
| q62702-f1298 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
| q62702-a1050 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Switching Diode (For high speed switching applications) |
| q62702-a1051 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Switching Diode Array (Connected in series For high speed switching applications) |
| q62702-a1065 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
| q62702-a1066 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | CAP CER 100UF 16V X5R 20% SMD |
| q62702-a1067 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | CAP CER 22UF 50V X5R 20% SMD |
| q62702-a1068 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | CAP CER 33UF 16V X7R 20% SMD |
| q62702-a1069 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
| q62702-a1070 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
| q62702-a1071 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Schottky Diode (General purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
| q62702-a1072 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
| q62702-a1084 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) |
| q62702-a1097 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | CAP CER 2200PF 250VAC X1Y2 RAD |
| q62702-a1103 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | CAP CER 2200PF 250VAC X1Y2 RAD |
| q62702-a1104 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | CAP CER 4700PF 250VAC X1Y2 RAD |
| q62702-a1105 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | CAP CER 4700PF 250VAC X1Y2 RAD |
| q62702-a113 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | CAP CER 3300PF 250VAC X1Y2 RAD |
| q62702-a1145 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | CAP CER 3300PF 250VAC X1Y2 RAD |
| q62702-a1159 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
| q62702-a1186 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
| q62702-a1188 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply |
| q62702-a1189 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply |
| q62702-a1190 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Schottky Diode (Low-power Schottky rectifier diode Miniature plastic package for surface mounting SMD) |
| q62702-a1277 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Silicon Switching Diode Array (For high-speed switching applications Connected in series Internal galvanic isolated Diodes in one package) |
| q62702-a145 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | SILICON PIN DIODES |
| q62702-a1473 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | INVERTER 5V-INPUT 1500V-OUTPUT |