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參數資料
| 型號： | Q62702-A1104 |
| 廠商： | SIEMENS AG |
| 英文描述： | CAP CER 4700PF 250VAC X1Y2 RAD |
| 中文描述： | 硅肖特基二極管（星展混頻器應用到12 GHz低噪聲系數低屏障型） |
| 文件頁數： | 5/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-A1104 |
BGC420
High Frequency Products
5
Edition A13, 05/99
Typical Application
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[
W
].
Place C2 as close to the device as possible.
D1
D2
R1 (47k)
Q2
R2 (500R)
R3
10k
R4 (2k7)
Q1
Vc,8
Vb,3
GND,7,2
RFin,1
RFout,6
Vr,5
Vcc,4
on
off
C2, 1nF
L1,100nH
C3, 100pF
Rx
3
C4,150pF C5,100nF
Figure 1. Typical Application and Internal Circuit
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| Q62702-A1105 | CAP CER 4700PF 250VAC X1Y2 RAD |
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| Q62702-A1145 | CAP CER 3300PF 250VAC X1Y2 RAD |
| Q62702-A1159 | Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-A1105 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diodes (Zero bias diode array for mixer and detectors up to GHz frequencies Crossover ring quad) |
| Q62702-A113 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Switching Diodes (High-speed, high-voltage switch) |
| Q62702-A1145 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
| Q62702-A1159 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
| Q62702-A1160 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
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