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參數(shù)資料
| 型號： | Q67060-S6111-A3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Smart High-Side Power Switch One Channel: 38mз Status Feedback |
| 中文描述： | 智能高側(cè)電源開關(guān)一個頻道：38mз狀態(tài)反饋 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 261K |
| 代理商： | Q67060-S6111-A3 |
BTS436L2
Semiconductor Group
Page 7
2003-Oct-01
Terms
PROFET
V
IN
ST
OUT
GND
bb
VST
VIN
IST
IIN
Vbb
Ibb
IL
VOUT
IGND
VON
1
2
4
3
5
RGND
Input circuit (ESD protection)
IN
GND
I
R
ESD-ZD
I
I
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended
Status output
ST
GND
ESD-
ZD
+5V
R
ST(ON)
ESD-Zener diode: 6.1
V typ., max 5.0 mA; R
ST(ON)
< 375
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.
Inductive and overvoltage output clamp
+ Vbb
OUT
GND
PROFET
VZ
V
ON
V
ON
clamped to 47 V typ.
Overvolt. and reverse batt. protection
+ 5V
+ Vbb
IN
ST
ST
R
GND
GND
R
Signal GND
Logic
PROFET
VZ2
I
R
VZ1
Load GND
Load
R
OUT
ST
R
V
Z1
= 6.1 V typ.,
V
Z2
= 47 V typ.,
R
GND
= 150
,
R
ST
= 15 k
,
R
I
= 3.5 k
typ.
In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
active
Open-load detection
in on-state
Open load, if
V
ON
< R
ON
·
I
L(OL)
; IN high
Open load
detection
Logic
unit
+ Vbb
OUT
ON
V
ON
GND disconnect
PROFET
V
IN
ST
OUT
GND
bb
Vbb
1
2
4
3
5
VINVST
VGND
Any kind of load. In case of Input=high is
V
OUT
≈
V
IN
-
V
IN(T+)
.
Due to V
GND
>0, no V
ST
= low signal available.
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| Q67060-S6111-A4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart High-Side Power Switch One Channel: 38mз Status Feedback |
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| Q67060-S6112-A3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch One Channel: 20mз |
| Q67060-S6112-A4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch One Channel: 20mз |
| Q67060-S6118 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch One Channel: 20mз Status Feedback |
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