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參數資料
| 型號： | IR343SG12H |
| 元件分類： | 晶閘管 |
| 英文描述： | 1200 V, SCR |
| 封裝： | 4 INCH, WAFER |
| 文件頁數： | 1/2頁 |
| 文件大小： | 120K |
| 代理商： | IR343SG12H |
1
www.irf.com
Junction Size
:
Square 343 mils
Wafer Size
:
4"
V
RRM
/ V
DRM
Class
:
1200 V
Passivation Process
:
Glassivated MESA
Reference IR Packaged Part
:
n.a.
PHASE CONTROL THYRISTORS
IR343SG12H
Major Ratings and Characteristics
Parameters
Units
Test Conditions
V
TM
Typical On-state Voltage
1.2 V
T
J
= 25°C, I
T
= 25 A
V
RRM
/ V
DRM
Direct and Reverse Breakdown Voltage
1200 V
T
J
= 25°C, I
DRM
/I
RRM
= 100 μA
(1)
I
GT
Required DC Gate Current to Trigger
5 to 100 mA
T
J
= 25° C, anode supply = 6 V, resistive oad
V
GT
Max. Required DC Gate Voltage to Trigger
2 V
T
J
= 25° C, anode supply = 6 V, resistive oad
I
H
Holding Current Range
5 to 200 mA
Anode supply = 6 V, resistive load
I
L
Maximum Latching Current
400 mA
Anode supply = 6 V, resistive load
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Nominal Front Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Chip Dimensions
340 x 340 mils (see drawing)
Wafer Diameter
100 mm, with std. <110> flat
Wafer Thickness
330 μm ± 10 μm
Maximum Width of Sawing Line
130 μm
Reject Ink Dot Size
0.25 mm diameter minimum
Ink Dot Location
See drawing
Recommended Storage Environment
Storage n original container, n dessicated
nitrogen, with no contamination
Bulletin I0108J 03/01
(1)
Nitrogen flow on die edge.
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