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參數資料
| 型號： | Q67060-S6952A3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Smart Highside High Current Power Switch |
| 中文描述： | 智能阻抗高側大電流電源開關 |
| 文件頁數： | 4/15頁 |
| 文件大小： | 279K |
| 代理商： | Q67060-S6952A3 |
Data Sheet BTS550P
Values
min
typ
Parameter and Conditions
at
T
j
=
-40 ... +150
°C,
V
bb
=
12
V unless otherwise specified
Symbol
Unit
max
Infineon Technologies AG
4
2003-Oct-01
Inverse Load Current Operation
On-state resistance
(Pins 1,5 to pin 3)
V
bIN
=
12 V,
I
L
=
-
20
A
see diagram on page 10
Nominal inverse load current
(Pins 1,5 to Tab)
V
ON
=
-0.5
V,
T
c =
85
°C
10
Drain-source diode voltage
(V
out
> V
bb
)
I
L
=
-
20
A,
I
IN
= 0,
T
j
=
+150°C
T
j
=
25
°C:
T
j
=
150
°C:
R
ON(inv)
--
2.8
5.0
115
3.6
6.5
m
I
L(inv)
90
--
A
-
V
ON
--
0.6
0.7
V
Operating Parameters
Operating voltage (
V
IN
=
0)
8, 12
)
Undervoltage shutdown
13
)
Undervoltage start of charge pump
see diagram page
14
Overvoltage protection
14
)
I
bb
=
15
mA
Standby current
I
IN
=
0
V
bb(on)
V
bIN(u)
V
bIN(ucp)
V
bIN(Z)
5.0
1.5
--
34
4.5
V
V
3.0
3.0
60
62
--
--
4.5
--
64
15
25
6.0
V
V
T
j
=-40°C:
T
j
=
25...+150°C:
T
j
=-40...+25°C:
T
j
=
150°C:
--
--
I
bb(off)
25
50
μ
A
12
) If the device is turned on before a V
-decrease, the operating voltage range is extended down to
V
bIN(u)
.
For the voltage range 0..34 V the device is fully protected against overtemperature and short circuit.
13
) V
bIN
= V
bb
-
V
IN
see diagram on page 8. When
V
bIN
increases from less than V
bIN(u)
up to
V
bIN(ucp)
= 5
V
(typ.) the charge pump is not active and
V
OUT
≈
V
bb
-
3
V.
14)
See also
V
ON(CL)
in circuit diagram on page 9.
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