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參數(shù)資料
| 型號(hào)： | Q67060-S6952A3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Smart Highside High Current Power Switch |
| 中文描述： | 智能阻抗高側(cè)大電流電源開關(guān) |
| 文件頁(yè)數(shù)： | 9/15頁(yè) |
| 文件大小： | 279K |
| 代理商： | Q67060-S6952A3 |
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Data Sheet BTS550P
Infineon Technologies AG
9
2003-Oct-01
V
OUT(CL)
= -19
V typ. via V
ZG
. With D
S
, V
OUT
is
clamped to V
bb
- V
ON(CL)
via V
Z1
. Using D
S
gives
faster deenergizing of the inductive load, but higher
peak power dissipation in the PROFET. In case of a
floating ground with a potential higher than 19V
referring to the OUT – potential the device will
switch on, if diode DS is not used.
Overvoltage protection of logic part
+ V
bb
V
OUT
IN
bb
R
Signal GND
Logic
PROFET
V
Z,IS
R
IS
IN
R
IS
V
Z,IN
R
V
V
Z,VIS
R
bb
=
120
typ
.
,
V
Z,IN
=
V
Z,IS
=
64
V
typ.,
R
IS
=
1
k
nominal. Note that when overvoltage exceeds 69
V
typ. a voltage above 5V can occur between IS and
GND, if R
V
, V
Z,VIS
are not used.
Reverse battery protection
Logic
IS
IN
IS
R
V
R
OUT
L
R
Power GND
Signal GND
Vbb
-
Power
Transistor
IN
R
bb
R
D
S
D
R
V
≥
1
k
,
R
IS
=
1
k
nominal. Add
R
IN
for reverse
battery protection in applications with
V
bb
above
16
V
18)
; recommended value: R
IN
+ R
IS
+ R
V
=
0.1A
|
V
bb
| - 12V if
0.1A
|
V
bb
| - 12V if D
S
is not used (or R
D
S
is used).
To minimize power dissipation at reverse battery
operation, the summarized current into the IN and
IS pin should be about 120mA. The current can be
provided by using a small signal diode D in parallel
to the input switch, by using a MOSFET input switch
or by proper adjusting the current through
R
IS
and
R
V
.
IN
=
V
bb
disconnect with energized
inductive load
Provide a current path with load current capability
by using a diode, a Z-diode, or a varistor. (
V
ZL
<
72
V or
V
Zb
<
30 V if R
IN
=0). For higher clamp voltages
currents at IN and IS have to be limited to
250 mA.
Version a:
PROFET
V
IN
OUT
IS
bb
Vbb
V
ZL
Version b:
PROFET
V
IN
OUT
IS
bb
Vbb
V
Zb
Note that there is no reverse battery protection
when using a diode without additional Z-diode V
ZL
,
V
Zb
.
Version c: Sometimes a neccessary voltage clamp
is given by non inductive loads R
L
connected to the
same switch and eliminates the need of clamping
circuit:
PROFET
V
IN
OUT
IS
bb
Vbb
R
L
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| Q67060-S6953A3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside High Current Power Switch |
| Q67060-S7000-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Four Channel Highside Power Switch |
| Q67060-S7002-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Four Channel Highside Power Switch |
| Q67060-S7003-A2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR SMD PROFET LESITUNGS MOSFET |
| Q67060-S7007A2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR SMD PROFET LESITUNGS MOSFET |
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