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參數資料
| 型號： | Q67060-S6952A3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Smart Highside High Current Power Switch |
| 中文描述： | 智能阻抗高側大電流電源開關 |
| 文件頁數： | 5/15頁 |
| 文件大小： | 279K |
| 代理商： | Q67060-S6952A3 |
Data Sheet BTS550P
Values
min
typ
Parameter and Conditions
at
T
j
=
-40 ... +150
°C,
V
bb
=
12
V unless otherwise specified
Symbol
Unit
max
Infineon Technologies AG
5
2003-Oct-01
Protection Functions
15
)
Short circuit current limit
(Tab to pins 1,5)
16
V
ON
=
12
V, time until shutdown max. 350
μ
s
T
c
=-40°C:
Short circuit shutdown delay after input current
positive slope,
V
ON
>
V
ON(SC)
min. value valid only if input "off-signal" time exceeds 30
μ
s
Output clamp
17
)
(inductive load switch off)
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
(e.g. overvoltage)
I
L
= 40 mA
Short circuit shutdown detection voltage
(pin 3 to pins 1,5)
Thermal overload trip temperature
Thermal hysteresis
I
L(SCp)
T
c
=25°C:
T
c
=+150°C:
100
110
120
190
220
210
350
330
310
A
t
d(SC)
80
--
350
μ
s
I
L
= 40 mA:
-
V
OUT(CL)
14
17
20
V
V
ON(CL)
40
44
47
V
V
ON(SC)
T
jt
T
jt
--
6
--
10
--
--
--
V
150
°C
K
--
Reverse Battery
Reverse battery voltage
18
)
On-state resistance
(Pins 1,5 to pin 3)
V
bb
=
-12V,
V
IN
=
0,
I
L
=
-
20
A,
R
IS
=
1
k
T
j
=
150
°C:
Integrated resistor in V
bb
line T
j
=25°C:
T
j
=150°C:
-
V
bb
R
ON(rev)
--
--
32
4.3
7.5
V
T
j
=
25
°C:
--
3.4
--
m
R
bb
90
105
110
125
135
150
15
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
16
) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by
permanent resetting the short circuit latch function. The lifetime will be reduced under such conditions.
17
) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, V
OUT
is clamped to V
bb
- V
ON(CL)
at inductive load switch off.
18
) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (
I
IN
=
I
IS
=
0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 9.
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