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參數資料
| 型號： | MG800J2YS50A |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA IGBT Module Silicon N Channel IGBT |
| 中文描述： | 東芝IGBT模塊IGBT的硅?頻道 |
| 文件頁數： | 2/7頁 |
| 文件大小： | 211K |
| 代理商： | MG800J2YS50A |
MG800J2YS50A
2002-10-31
2
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate Leakage current
I
GES
V
GE
20 V, V
CE
0 V
10
A
Collector cut-off current
I
CES
V
CE
600 V, V
GE
0 V
1
mA
Gate-emitter cut-off voltage
V
GE (off)
I
C
800 mA, V
CE
5 V
6.5
V
T
j
25°C
2.4
3.0
Collector-emitter saturation voltage
V
CE (sat)
I
C
800 A,
V
GE
15 V
T
j
125°C
2.6
3.3
V
Input capacitance
C
ies
V
CE
10 V, V
GE
0 V, f 1 MHz
93000
pF
Gate-emitter voltage
V
GE
13
15
17
V
Gate resistance
R
G
4.7
15
t
d (on)
0.3
t
r
0.25
t
on
0.55
t
d (off)
0.85
t
f
0.15
0.30
Switching time
t
off
Inductive load
V
CC
300 V
I
C
800 A
V
GE
15 V
R
G
4.7
(Note)
1.05
s
T
j
25°C
2.3
3.0
Forward voltage
VF
I
F
800A,
V
GE
0V
T
j
125°C
2.1
V
Reverse recovery time
trr
I
F
800 A, V
GE
10 V
di/dt 2000 A/ s
0.5
s
Transistor stage
0.043
Thermal resistance
Rth (j-c)
Diode stage
0.056
C/W
RTC Operating current
Irtc
T
j
25°C
1600
A
Thermistor
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Zero power resistance
R25
Tc 25°C
100
k
B value
R25/85
Tc 25°C/Tc 85°C
4390
K
Isolation voltage
Tc 25°C
2500
Vrms
Note: Switching time measurement circuit and input/output waveforms
t
f
t
d (off)
t
d (on)
t
off
90%
V
GE
I
C
0
0
t
rr
90%
10%
10%
90%
10%
t
r
t
on
I
C
R
G
R
G
V
CE
L
I
F
V
GE
V
CC
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