| 型號 | 廠商 | 描述 |
| mg600q1us61 2 3 4 5 6 7 8 |
Toshiba Corporation | TOSHIBA IGBT Module Silicon N Channel IGBT |
| mg600q1us41 2 3 4 5 6 7 8 |
Toshiba Corporation | Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes |
| mg600q2ys60a 2 3 4 5 6 7 8 |
Toshiba Corporation | HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
| mg600 2 3 4 5 6 |
Toshiba Corporation | N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
| mg600j1us51 2 3 4 5 6 |
Toshiba Corporation | N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
| mg75j2ys50 2 3 4 5 |
Toshiba Corporation | Silicon N channel IGBT(N溝道絕緣柵雙極型晶體管) |
| mg75j6es50 2 3 4 5 6 |
Toshiba Corporation | N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
| mg75q2ys50 2 3 4 5 6 |
Toshiba Corporation | Silicon N channel IGBT(N溝道絕緣柵雙極型晶體管) |
| mg75q2ys51 2 3 4 5 6 |
Toshiba Corporation | 24-Port Wireless Switch; Approval Categories:UL, EN & IEC: 60950-I; EMC FCC Part 15 Class B, EN 300386; Data Rate:54Mbps; External Depth:15.5"; External Height:1.7"; External Width:17.3" RoHS Compliant: Yes |
| mg75q2yk1 2 3 4 5 6 |
Electronic Theatre Controls, Inc. | TRANSISTOR MODULES |
| mg75q2yl1 2 3 4 5 6 |
Electronic Theatre Controls, Inc. | TRANSISTOR MODULES |
| mg75q2ys52 2 3 4 5 6 |
Toshiba Corporation | CABLE, EFGLAS, 22AWG, WHITE, 100M; Area, conductor CSA:0.336mm2; Conductor make-up:19/0.15mm; Voltage rating, AC:600V; Current rating:9A; Colour, primary insulation:White; Material, primary insulation:PTFE; Diameter, External:2.05mm; RoHS Compliant: Yes |
| mg75q2ys40 2 3 4 5 6 |
Toshiba Corporation | WIRE, ETFE, TEFZEL, 12AWG, WHITE, 100M; Area, conductor CSA:3.022mm2; Conductor make-up:37/0.320; Voltage rating, AC:600V; Current rating:35A; Colour, primary insulation:White; Material, primary insulation:Tefzel; Diameter, RoHS Compliant: Yes |
| mg75q2ys42 2 3 4 5 6 |
Toshiba Corporation | WIRE, PTFE, B, BLACK, 19/0.2MM, 100M; Area, conductor CSA:0.597mm2; Conductor make-up:19/0.2; Voltage rating, AC:600V; Current rating:11A; Colour, primary insulation:Black; Material, primary insulation:PTFE; Diameter, External:1.6mm; RoHS Compliant: Yes |
| mg800j2ys50a 2 3 4 5 6 7 |
Toshiba Corporation | TOSHIBA IGBT Module Silicon N Channel IGBT |
| mg90v2ys40 2 3 4 5 |
Toshiba Corporation | WIRE, ETFE, TEFZEL, 14AWG, WHITE, 100M; Area, conductor CSA:1.675mm2; Conductor make-up:37/0.250; Voltage rating, AC:600V; Current rating:23A; Colour, primary insulation:White; Material, primary insulation:Tefzel; Diameter, RoHS Compliant: Yes |
| mgf0904 2 3 |
Mitsubishi Electric Corporation | L,S BAND POWER GaAs FET |
| mgf0904a 2 3 |
Mitsubishi Electric Corporation | L,S BAND POWER GaAs FET |
| mgf0905 2 3 |
Mitsubishi Electric Corporation | MINIATURE POWER RELAY |
| mgf0905a 2 3 |
Mitsubishi Electric Corporation | L,S BAND POWER GaAs FET |
| mgf0906 2 3 |
Mitsubishi Electric Corporation | L,S BAND POWER GaAs FET |
| mgf0906b 2 3 |
Mitsubishi Electric Corporation | L,S BAND POWER GaAs FET |
| mgf0907 2 3 |
Mitsubishi Electric Corporation | L,S BAND POWER GaAs FET |
| mgf0907b 2 3 |
Mitsubishi Electric Corporation | L,S BAND POWER GaAs FET |
| mgf0909 2 3 |
Mitsubishi Electric Corporation | L,S BAND POWER GaAs FET |
| mgf0909a 2 3 |
Mitsubishi Electric Corporation | L,S BAND POWER GaAs FET |
| mgf0910a 2 3 |
Mitsubishi Electric Corporation | L, S BAND POWER GaAs FET |
| mgf0911a 2 3 |
Mitsubishi Electric Corporation | L, S BAND POWER GaAs FET |
| mgf0913a 2 3 4 |
Mitsubishi Electric Corporation | L & S BAND GaAs FET [ SMD non - matched ] |
| mgf0915a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Mitsubishi Electric Corporation | L & S BAND GaAs FET[ SMD non - matched ] |
| mgf0918a 2 3 |
Mitsubishi Electric Corporation | L & S BAND GaAs FET [ SMD non - matched ] |
| mgf0919a 2 3 4 |
Mitsubishi Electric Corporation | L & S BAND GaAs FET [ SMD non matched ] |
| mgf0952p 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Mitsubishi Electric Corporation | L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] |
| mgf1302 2 3 4 |
Mitsubishi Electric Corporation | LOW NOISE GaAs FET |
| mgf1303 2 3 4 |
Mitsubishi Electric Corporation | LOW NOISE GaAs FET |
| mgf1303b 2 3 4 |
Mitsubishi Electric Corporation | LOW NOISE GaAs FET |
| mgf1304a 2 3 4 |
Mitsubishi Electric Corporation | FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE |
| mgf1305 2 3 4 |
Mitsubishi Electric Corporation | FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE |
| mgf1403b 2 3 4 |
Mitsubishi Electric Corporation | LOW NOISE GaAs FET |
| mgf1423b 2 3 4 5 |
Mitsubishi Electric Corporation | SMALL SIGNAL GaAs FET |
| mgf1801 2 3 |
Mitsubishi Electric Corporation | MICROWAVE POWER GaAs FET |
| mgf1801b 2 3 |
Mitsubishi Electric Corporation | MICROWAVE POWER GaAs FET |
| mgf1801bt 2 3 |
Mitsubishi Electric Corporation | TAPE CARRIER MICROWAVE POWER GaAs FET |
| mgf1908a 2 3 4 5 |
Mitsubishi Electric Corporation | TAPE CARRIER LOW NOISE GaAs FET |
| mgf2407 2 |
Mitsubishi Electric Corporation | MICROWAVE POWER GaAs FET |
| mgf4316 2 3 |
Mitsubishi Electric Corporation | Super Low Noise InGaAs HEMT |
| mgf4319 2 3 |
Mitsubishi Electric Corporation | Super Low Noise InGaAs HEMT |
| mgf4714cp 2 3 |
Mitsubishi Electric Corporation | PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT |
| mgf491xg 2 3 |
Mitsubishi Electric Corporation | SUPER LOW NOISE InGaAs HEMT |
| mgf4916 2 3 |
Mitsubishi Electric Corporation | CONTACT |