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參數資料
| 型號： | MC68B912B32 |
| 廠商： | Motorola, Inc. |
| 英文描述： | 2.5V 100ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125 |
| 中文描述： | 16位微控制器 |
| 文件頁數： | 50/128頁 |
| 文件大小： | 748K |
| 代理商： | MC68B912B32 |
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MOTOROLA
50
MC68HC912B32
MC68HC912B32TS/D
BULKP
— Bulk Erase Protection
0 = EEPROM can be bulk erased.
1 = EEPROM is protected from being bulk or row erased.
Read anytime. Write anytime if EEPGM = 0 and PROTLCK = 0.
BYTE — Byte and Aligned Word Erase
0 = Bulk or row erase is enabled.
1 = One byte or one aligned word erase only.
Read anytime. Write anytime if EEPGM = 0.
ROW — Row or Bulk Erase (when BYTE = 0)
0 = Erase entire EEPROM array.
1 = Erase only one 32-byte row.
Read anytime. Write anytime if EEPGM = 0.
BYTE and ROW have no effect when ERASE = 0
If BYTE = 1 and test mode is not enabled, only the location specified by the address written to the pro-
gramming latches will be erased. The operation will be a byte or an aligned word erase depending on
the size of written data.
ERASE — Erase Control
0 = EEPROM configuration for programming or reading.
1 = EEPROM configuration for erasure.
Read anytime. Write anytime if EEPGM = 0.
Configures the EEPROM for erasure or programming.
When test mode is not enabled and unless BULKP is set, erasure is by byte, aligned word, row or bulk.
EELAT — EEPROM Latch Control
0 = EEPROM set up for normal reads.
1 = EEPROM address and data bus latches set up for programming or erasing.
Read anytime. Write anytime if EEPGM = 0.
BYTE, ROW, ERASE and EELAT bits can be written simultaneously or in any sequence.
EEPGM — Program and Erase Enable
0 = Disables program/erase voltage to EEPROM.
1 = Applies program/erase voltage to EEPROM.
The EEPGM bit can be set only after EELAT has been set. When an attempt is made to set EELAT and
EEPGM simultaneously, EEPGM remains clear but EELAT is set.
The BULKP, BYTE, ROW, ERASE and EELAT bits cannot be changed when EEPGM is set. To com-
plete a program or erase, two successive writes to clear EEPGM and EELAT bits are required before
reading the programmed data. A write to an EEPROM location has no effect when EEPGM is set.
Latched address and data cannot be modified during program or erase.
EEPROG
— EEPROM Control
$00F3
Bit 7
6
5
4
3
2
1
Bit 0
BULKP
0
0
BYTE
ROW
ERASE
EELAT
EEPGM
RESET:
1
0
0
0
0
0
0
0
Table 16 Erase Selection
BYTE
0
0
1
1
ROW
0
1
0
1
Block Size
Bulk erase entire EEPROM array
Row erase 32 bytes
Byte or aligned word erase
Byte or aligned word erase
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